Технічний опис APTM100H18FG Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge, Type of module: MOSFET transistor, Technology: FREDFET; POWER MOS 7®, Drain current: 33A, Drain-source voltage: 1kV, Mechanical mounting: screw, Electrical mounting: FASTON connectors; screw, Gate-source voltage: ±30V, Semiconductor structure: transistor/transistor, Case: SP6C, On-state resistance: 0.21Ω, Topology: H-bridge, Pulsed drain current: 172A, Power dissipation: 780W, кількість в упаковці: 1 шт.
Інші пропозиції APTM100H18FG
| Фото | Назва | Виробник | Інформація |
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| APTM100H18FG | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Drain current: 33A Drain-source voltage: 1kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 0.21Ω Topology: H-bridge Pulsed drain current: 172A Power dissipation: 780W кількість в упаковці: 1 шт |
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APTM100H18FG | Виробник : Microsemi Corporation |
Description: MOSFET 4N-CH 1000V 43A SP6 |
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| APTM100H18FG | Виробник : Microchip / Microsemi |
Discrete Semiconductor Modules CC6154 |
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| APTM100H18FG | Виробник : Microchip Technology |
Discrete Semiconductor Modules CC6154 |
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| APTM100H18FG | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 33A; SP6C; Topology: H-bridge Type of module: MOSFET transistor Technology: FREDFET; POWER MOS 7® Drain current: 33A Drain-source voltage: 1kV Mechanical mounting: screw Electrical mounting: FASTON connectors; screw Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP6C On-state resistance: 0.21Ω Topology: H-bridge Pulsed drain current: 172A Power dissipation: 780W |
товар відсутній |