Технічний опис APTM100H46FT3G Microchip Technology
Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W, Type of module: MOSFET transistor, Mechanical mounting: screw, Drain current: 14A, Drain-source voltage: 1kV, Electrical mounting: Press-in PCB, Gate-source voltage: ±30V, Semiconductor structure: transistor/transistor, Case: SP3, On-state resistance: 552mΩ, Topology: H-bridge; NTC thermistor, Pulsed drain current: 120A, Power dissipation: 357W, Technology: POWER MOS 8®, кількість в упаковці: 1 шт.
Інші пропозиції APTM100H46FT3G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM100H46FT3G | Виробник : MICROCHIP (MICROSEMI) |
 Category: Transistor modules MOSFETDescription: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 14A Drain-source voltage: 1kV Electrical mounting: Press-in PCB Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP3 On-state resistance: 552mΩ Topology: H-bridge; NTC thermistor Pulsed drain current: 120A Power dissipation: 357W Technology: POWER MOS 8® кількість в упаковці: 1 шт |
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| APTM100H46FT3G | Виробник : Microsemi Corporation |
Description: MOSFET 4N-CH 1000V 19A SP3 |
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| APTM100H46FT3G | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC3061 |
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| APTM100H46FT3G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 1kV; 14A; SP3; Press-in PCB; 357W Type of module: MOSFET transistor Mechanical mounting: screw Drain current: 14A Drain-source voltage: 1kV Electrical mounting: Press-in PCB Gate-source voltage: ±30V Semiconductor structure: transistor/transistor Case: SP3 On-state resistance: 552mΩ Topology: H-bridge; NTC thermistor Pulsed drain current: 120A Power dissipation: 357W Technology: POWER MOS 8® |
товар відсутній |