APTM100SK33T1G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A
Case: SP1
Semiconductor structure: diode/transistor
Power dissipation: 390W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Type of module: MOSFET transistor
Technology: POWER MOS 8®
Gate-source voltage: ±30V
Topology: buck chopper; NTC thermistor
Drain-source voltage: 1kV
Pulsed drain current: 140A
Drain current: 17A
On-state resistance: 396mΩ
кількість в упаковці: 1 шт
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Технічний опис APTM100SK33T1G MICROCHIP (MICROSEMI)
Description: MOSFET N-CH 1000V 23A SP1, Packaging: Bulk, Package / Case: SP1, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23A (Tc), Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V, Power Dissipation (Max): 390W (Tc), Vgs(th) (Max) @ Id: 5V @ 2.5mA, Supplier Device Package: SP1, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V.
Інші пропозиції APTM100SK33T1G
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| APTM100SK33T1G | Виробник : Microchip Technology |
Description: MOSFET N-CH 1000V 23A SP1 Packaging: Bulk Package / Case: SP1 Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Tc) Rds On (Max) @ Id, Vgs: 396mOhm @ 18A, 10V Power Dissipation (Max): 390W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: SP1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 305 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7868 pF @ 25 V |
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| APTM100SK33T1G | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC8017 |
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| APTM100SK33T1G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; diode/transistor; 1kV; 17A; SP1; Press-in PCB; Idm: 140A Case: SP1 Semiconductor structure: diode/transistor Power dissipation: 390W Electrical mounting: Press-in PCB Mechanical mounting: screw Type of module: MOSFET transistor Technology: POWER MOS 8® Gate-source voltage: ±30V Topology: buck chopper; NTC thermistor Drain-source voltage: 1kV Pulsed drain current: 140A Drain current: 17A On-state resistance: 396mΩ |
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