APTM10HM19FT3G

APTM10HM19FT3G Microchip Technology


High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Виробник: Microchip Technology
Discrete Semiconductor Modules DOR CC3028
на замовлення 9 шт:

термін постачання 285-294 дні (днів)
Кількість Ціна без ПДВ
1+6692.72 грн
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Технічний опис APTM10HM19FT3G Microchip Technology

Category: Transistor modules MOSFET, Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W, Electrical mounting: Press-in PCB, Case: SP3F, Mechanical mounting: screw, Semiconductor structure: transistor/transistor, Drain current: 50A, Technology: FREDFET; POWER MOS 5®, Gate-source voltage: ±30V, Topology: H-bridge; NTC thermistor, Pulsed drain current: 300A, Type of module: MOSFET transistor, On-state resistance: 21mΩ, Power dissipation: 208W, Drain-source voltage: 100V, кількість в упаковці: 1 шт.

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APTM10HM19FT3G APTM10HM19FT3G Виробник : Microchip Technology 11940973126812168057-aptm10hm19ft3g-rev2-pdf.pdf Trans MOSFET N-CH 100V 70A 32-Pin Case SP-3 Tube
товар відсутній
APTM10HM19FT3G Виробник : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Electrical mounting: Press-in PCB
Case: SP3F
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Drain current: 50A
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Type of module: MOSFET transistor
On-state resistance: 21mΩ
Power dissipation: 208W
Drain-source voltage: 100V
кількість в упаковці: 1 шт
товар відсутній
APTM10HM19FT3G APTM10HM19FT3G Виробник : Microchip Technology High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Description: MOSFET 4N-CH 100V 70A SP3
Packaging: Bulk
Package / Case: SP3
Mounting Type: Chassis Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 208W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 70A
Input Capacitance (Ciss) (Max) @ Vds: 5100pF @ 25V
Rds On (Max) @ Id, Vgs: 21mOhm @ 35A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SP3
товар відсутній
APTM10HM19FT3G Виробник : MICROCHIP (MICROSEMI) High-Voltage-Power-Discretes-and-Modules-Brochure-00003052.pdf Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 100V; 50A; SP3F; Press-in PCB; 208W
Electrical mounting: Press-in PCB
Case: SP3F
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Drain current: 50A
Technology: FREDFET; POWER MOS 5®
Gate-source voltage: ±30V
Topology: H-bridge; NTC thermistor
Pulsed drain current: 300A
Type of module: MOSFET transistor
On-state resistance: 21mΩ
Power dissipation: 208W
Drain-source voltage: 100V
товар відсутній