APTM50H14FT3G MICROCHIP (MICROSEMI)
Виробник: MICROCHIP (MICROSEMI)Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 500V; 18A; SP3F; Ugs: ±30V; Idm: 105A
Drain-source voltage: 500V
Drain current: 18A
On-state resistance: 168mΩ
Case: SP3F
Semiconductor structure: transistor/transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Topology: H-bridge; NTC thermistor
Technology: FREDFET; POWER MOS 7®
Power dissipation: 208W
Pulsed drain current: 105A
Gate-source voltage: ±30V
Type of module: MOSFET transistor
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Технічний опис APTM50H14FT3G MICROCHIP (MICROSEMI)
Description: MOSFET 4N-CH 500V 26A SP3, Packaging: Bulk, Package / Case: SP3, Mounting Type: Chassis Mount, Configuration: 4 N-Channel (Half Bridge), Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 208W, Drain to Source Voltage (Vdss): 500V, Current - Continuous Drain (Id) @ 25°C: 26A, Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V, Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V, Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V, Vgs(th) (Max) @ Id: 5V @ 1mA, Supplier Device Package: SP3, Part Status: Active.
Інші пропозиції APTM50H14FT3G
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| APTM50H14FT3G | Виробник : MICROSEMI |
SP3/26 A, 500 V, 0.168 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER,MOSFET APTM50 кількість в упаковці: 1 шт |
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APTM50H14FT3G | Виробник : Microchip Technology |
Description: MOSFET 4N-CH 500V 26A SP3 Packaging: Bulk Package / Case: SP3 Mounting Type: Chassis Mount Configuration: 4 N-Channel (Half Bridge) Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 208W Drain to Source Voltage (Vdss): 500V Current - Continuous Drain (Id) @ 25°C: 26A Input Capacitance (Ciss) (Max) @ Vds: 3259pF @ 25V Rds On (Max) @ Id, Vgs: 168mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 72nC @ 10V Vgs(th) (Max) @ Id: 5V @ 1mA Supplier Device Package: SP3 Part Status: Active |
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APTM50H14FT3G | Виробник : Microchip Technology |
Discrete Semiconductor Modules DOR CC3032 |
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| APTM50H14FT3G | Виробник : MICROCHIP (MICROSEMI) |
Category: Transistor modules MOSFET Description: Module; transistor/transistor; 500V; 18A; SP3F; Ugs: ±30V; Idm: 105A Drain-source voltage: 500V Drain current: 18A On-state resistance: 168mΩ Case: SP3F Semiconductor structure: transistor/transistor Electrical mounting: Press-in PCB Mechanical mounting: screw Topology: H-bridge; NTC thermistor Technology: FREDFET; POWER MOS 7® Power dissipation: 208W Pulsed drain current: 105A Gate-source voltage: ±30V Type of module: MOSFET transistor |
товар відсутній |