AUIRFR1010Z

AUIRFR1010Z Infineon Technologies


4571051160696732auirfr1010z.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 55V 91A Automotive 3-Pin(2+Tab) DPAK Tube
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис AUIRFR1010Z Infineon Technologies

Description: AUIRFR1010 - 55V-60V N-CHANNEL A, Packaging: Bulk, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 100µA, Supplier Device Package: D-PAK (TO-252AA), Part Status: Active, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V.

Інші пропозиції AUIRFR1010Z

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
AUIRFR1010Z AUIRFR1010Z Виробник : Infineon Technologies IRSDS11928-1.pdf?t.download=true&u=5oefqw Description: AUIRFR1010 - 55V-60V N-CHANNEL A
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 42A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 100µA
Supplier Device Package: D-PAK (TO-252AA)
Part Status: Active
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
товар відсутній
AUIRFR1010Z AUIRFR1010Z Виробник : Infineon / IR auirfr1010z-1297924.pdf MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms
товар відсутній