AUIRFS4010-7TRL

AUIRFS4010-7TRL Infineon Technologies


3062806647888609auirfs4010-7p.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 100V 190A Automotive 7-Pin(6+Tab) D2PAK T/R
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Технічний опис AUIRFS4010-7TRL Infineon Technologies

Description: MOSFET N-CH 100V 190A D2PAK-7P, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D2PAK (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 190A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V, Power Dissipation (Max): 380W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK (7-Lead), Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V.

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AUIRFS4010-7TRL AUIRFS4010-7TRL Виробник : Infineon Technologies AUIRFS4010-7P.pdf Description: MOSFET N-CH 100V 190A D2PAK-7P
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 110A, 10V
Power Dissipation (Max): 380W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK (7-Lead)
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9830 pF @ 50 V
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AUIRFS4010-7TRL AUIRFS4010-7TRL Виробник : Infineon Technologies Infineon_AUIRFS4010_DS_v02_02_EN-1730984.pdf MOSFET 100V 190A 4 mOhm Automotive MOSFET
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