Технічний опис BFG591,115
Description: RF TRANS NPN 15V 7GHZ SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: 150°C (TJ), Power - Max: 2W, Current - Collector (Ic) (Max): 200mA, Voltage - Collector Emitter Breakdown (Max): 15V, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V, Frequency - Transition: 7GHz, Supplier Device Package: SC-73, Part Status: Obsolete.
Інші пропозиції BFG591,115
Фото | Назва | Виробник | Інформація |
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BFG591,115 | Виробник : NXP Semiconductors | Trans RF BJT NPN 15V 0.2A 2000mW 4-Pin(3+Tab) SC-73 T/R |
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BFG591,115 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 15V 7GHZ SOT223 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 2W Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V Frequency - Transition: 7GHz Supplier Device Package: SC-73 Part Status: Obsolete |
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BFG591,115 | Виробник : NXP USA Inc. |
Description: RF TRANS NPN 15V 7GHZ SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Power - Max: 2W Current - Collector (Ic) (Max): 200mA Voltage - Collector Emitter Breakdown (Max): 15V DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 70mA, 8V Frequency - Transition: 7GHz Supplier Device Package: SC-73 Part Status: Obsolete |
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BFG591,115 | Виробник : NXP Semiconductors | RF Bipolar Transistors NPN 15V 7GHZ |
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BFG591,115 | Виробник : onsemi / Fairchild | Bipolar Transistors - BJT |
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