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термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 109.64 грн |
| 10+ | 92.96 грн |
| 25+ | 75.58 грн |
| 100+ | 64.93 грн |
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Технічний опис BUK7635-100A,118 Nexperia
Description: MOSFET N-CH 100V 41A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V, Power Dissipation (Max): 149W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK7635-100A,118
| Фото | Назва | Виробник | Інформація |
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BUK7635-100A,118 | Виробник : Nexperia USA Inc. |
 Description: MOSFET N-CH 100V 41A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V Power Dissipation (Max): 149W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
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BUK7635-100A,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 41A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 25A, 10V Power Dissipation (Max): 149W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 25 V Qualification: AEC-Q101 |
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BUK7635-100A,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 29A; Idm: 165A; 149W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 29A Pulsed drain current: 165A Power dissipation: 149W Case: D2PAK; SOT404 Gate-source voltage: ±20V On-state resistance: 88mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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