Продукція > NEXPERIA > BUK7880-55A,115
BUK7880-55A,115

BUK7880-55A,115 NEXPERIA


4376272268650159buk7880-55a.pdf Виробник: NEXPERIA
Trans MOSFET N-CH 55V 7A Automotive 4-Pin(3+Tab) SC-73 T/R
товар відсутній

Відгуки про товар
Написати відгук

Технічний опис BUK7880-55A,115 NEXPERIA

Description: MOSFET N-CH 55V 7A SOT-223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V, Power Dissipation (Max): 8W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: SC-73, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Qualification: AEC-Q101.

Інші пропозиції BUK7880-55A,115

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
BUK7880-55A,115 BUK7880-55A,115 Виробник : NXP USA Inc. BUK7880-55A.pdf Description: MOSFET N-CH 55V 7A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
товар відсутній
BUK7880-55A,115 BUK7880-55A,115 Виробник : NXP USA Inc. BUK7880-55A.pdf Description: MOSFET N-CH 55V 7A SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 10A, 10V
Power Dissipation (Max): 8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SC-73
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
товар відсутній