BUK7Y53-100B,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 100V 24.8A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1467 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 26.36 грн |
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Технічний опис BUK7Y53-100B,115 Nexperia USA Inc.
Description: MOSFET N-CH 100V 24.8A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V, Power Dissipation (Max): 85W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1467 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK7Y53-100B,115 за ціною від 20.9 грн до 62.03 грн
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BUK7Y53-100B,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 100V 24.8A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24.8A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 10A, 10V Power Dissipation (Max): 85W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1467 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2998 шт: термін постачання 21-31 дні (днів) |
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BUK7Y53-100B,115 | Виробник : Nexperia |
MOSFET BUK7Y53-100B/SOT669/LFPAK |
на замовлення 1433 шт: термін постачання 21-30 дні (днів) |
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| BUK7Y53-100B,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17.6A Pulsed drain current: 99A Power dissipation: 85W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 138mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK7Y53-100B,115 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 85W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17.6A Pulsed drain current: 99A Power dissipation: 85W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 138mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |