BUK9214-30A,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 63A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2317 pF @ 25 V
Description: MOSFET N-CH 30V 63A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 63A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Power Dissipation (Max): 107W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2317 pF @ 25 V
на замовлення 30000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2500+ | 41.69 грн |
5000+ | 38.14 грн |
12500+ | 36.7 грн |
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Технічний опис BUK9214-30A,118 Nexperia USA Inc.
Description: NEXPERIA - BUK9214-30A,118 - Leistungs-MOSFET, n-Kanal, 30 V, 63 A, 0.009 ohm, TO-252 (DPAK), Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 63A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Verlustleistung Pd: 107W, Gate-Source-Schwellenspannung, max.: 1.5V, euEccn: NLR, Verlustleistung: 107W, Bauform - Transistor: TO-252 (DPAK), Qualifizierungsstandard der Automobilindustrie: AEC-Q101, Anzahl der Pins: 3Pin(s), Produktpalette: TrenchMOS, productTraceability: Yes-Date/Lot Code, Wandlerpolarität: n-Kanal, Kanaltyp: n-Kanal, Betriebswiderstand, Rds(on): 0.009ohm, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.009ohm, SVHC: No SVHC (17-Jan-2023).
Інші пропозиції BUK9214-30A,118 за ціною від 33.93 грн до 112.06 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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BUK9214-30A,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 63A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 63A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2317 pF @ 25 V |
на замовлення 33829 шт: термін постачання 21-31 дні (днів) |
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BUK9214-30A,118 | Виробник : Nexperia | MOSFET BUK9214-30A/SOT428/DPAK |
на замовлення 10805 шт: термін постачання 21-30 дні (днів) |
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BUK9214-30A,118 | Виробник : NEXPERIA |
Description: NEXPERIA - BUK9214-30A,118 - Leistungs-MOSFET, n-Kanal, 30 V, 63 A, 0.009 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 63A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 107W Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 107W Bauform - Transistor: TO-252 (DPAK) Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchMOS productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.009ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.009ohm SVHC: No SVHC (17-Jan-2023) |
на замовлення 7189 шт: термін постачання 21-31 дні (днів) |
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BUK9214-30A,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 253A; 107W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 45A Pulsed drain current: 253A Power dissipation: 107W Case: DPAK Gate-source voltage: ±15V On-state resistance: 26.6mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 2500 шт |
товар відсутній |
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BUK9214-30A,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 45A; Idm: 253A; 107W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 45A Pulsed drain current: 253A Power dissipation: 107W Case: DPAK Gate-source voltage: ±15V On-state resistance: 26.6mΩ Mounting: SMD Gate charge: 31nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |