Технічний опис BY203-16STAP Vishay
Description: DIODE AVAL 1.6KV 250MA SOD57, Packaging: Tape & Box (TB), Package / Case: SOD-57, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 300 ns, Technology: Avalanche, Current - Average Rectified (Io): 250mA, Supplier Device Package: SOD-57, Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1600 V, Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA, Current - Reverse Leakage @ Vr: 2 µA @ 1000 V.
Інші пропозиції BY203-16STAP
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BY203-16STAP | Виробник : VISHAY |
 Category: THT universal diodesDescription: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching Kind of package: Ammo Pack Max. forward impulse current: 20A Case: SOD57 Max. forward voltage: 2.4V Leakage current: 2µA Reverse recovery time: 300ns кількість в упаковці: 1 шт |
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BY203-16STAP | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE AVAL 1.6KV 250MA SOD57 Packaging: Tape & Box (TB) Package / Case: SOD-57, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Current - Average Rectified (Io): 250mA Supplier Device Package: SOD-57 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1600 V Voltage - Forward (Vf) (Max) @ If: 2.4 V @ 200 mA Current - Reverse Leakage @ Vr: 2 µA @ 1000 V |
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BY203-16STAP | Виробник : Vishay Semiconductors |
Rectifiers 1600 Volt 0.25 Amp 20 Amp IFSM |
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BY203-16STAP | Виробник : VISHAY |
Category: THT universal diodes Description: Diode: rectifying; THT; 1.6kV; 0.25A; Ammo Pack; Ifsm: 20A; SOD57 Type of diode: rectifying Mounting: THT Max. off-state voltage: 1.6kV Load current: 0.25A Semiconductor structure: single diode Features of semiconductor devices: avalanche breakdown effect; fast switching Kind of package: Ammo Pack Max. forward impulse current: 20A Case: SOD57 Max. forward voltage: 2.4V Leakage current: 2µA Reverse recovery time: 300ns |
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