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BYD17D,115 NXP USA Inc.
Виробник: NXP USA Inc.Description: DIODE AVALANCHE 200V 1.5A MELF
Packaging: Tape & Reel (TR)
Package / Case: SOD-87
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Avalanche
Capacitance @ Vr, F: 21pF @ 0V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
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Технічний опис BYD17D,115 NXP USA Inc.
Description: DIODE AVALANCHE 200V 1.5A MELF, Packaging: Tape & Reel (TR), Package / Case: SOD-87, Mounting Type: Surface Mount, Speed: Standard Recovery >500ns, > 200mA (Io), Reverse Recovery Time (trr): 3 µs, Technology: Avalanche, Capacitance @ Vr, F: 21pF @ 0V, 1MHz, Current - Average Rectified (Io): 1.5A, Supplier Device Package: MELF, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A, Current - Reverse Leakage @ Vr: 1 µA @ 200 V.
Інші пропозиції BYD17D,115
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BYD17D,115 | Виробник : NXP USA Inc. |
Description: DIODE AVALANCHE 200V 1.5A MELF Packaging: Cut Tape (CT) Package / Case: SOD-87 Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3 µs Technology: Avalanche Capacitance @ Vr, F: 21pF @ 0V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.05 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
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