DBL106G Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 1A DBL
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Part Status: Active
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A
Current - Reverse Leakage @ Vr: 2 µA @ 800 V
на замовлення 130 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
7+ | 41.38 грн |
10+ | 35.04 грн |
100+ | 26.86 грн |
Відгуки про товар
Написати відгук
Технічний опис DBL106G Taiwan Semiconductor Corporation
Description: BRIDGE RECT 1PHASE 800V 1A DBL, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: DBL, Part Status: Active, Voltage - Peak Reverse (Max): 800 V, Current - Average Rectified (Io): 1 A, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 15 A, Current - Reverse Leakage @ Vr: 2 µA @ 800 V.
Інші пропозиції DBL106G
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
DBL106G | Виробник : Taiwan Semiconductor | Bridge Rectifiers 1A, 800V, Standard Bridge Rectifier |
товар відсутній |