FCP11N60N-F102

FCP11N60N-F102 ON Semiconductor


fcpf11n60nt.pdf Виробник: ON Semiconductor
N-Channel SupreMOS® MOSFET
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Технічний опис FCP11N60N-F102 ON Semiconductor

Description: MOSFET N-CH 600V 10.8A TO220F, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc), Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220F, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V.

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FCP11N60N-F102 FCP11N60N-F102 Виробник : onsemi fcpf11n60nt-d.pdf Description: MOSFET N-CH 600V 10.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
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FCP11N60N-F102 FCP11N60N-F102 Виробник : onsemi / Fairchild FCPF11N60NT_D-2311827.pdf MOSFET FCP11N60N, in TO220 F102 T/F option
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