Технічний опис FEPB16FT-E3/81 Vishay Semiconductors
Category: SMD universal diodes, Description: Diode: rectifying; SMD; 300V; 8Ax2; 50ns; D2PAK; Ufmax: 1.3V; tube, Type of diode: rectifying, Mounting: SMD, Max. off-state voltage: 300V, Load current: 8A x2, Reverse recovery time: 50ns, Semiconductor structure: common cathode; double, Features of semiconductor devices: glass passivated; ultrafast switching, Capacitance: 85pF, Case: D2PAK, Max. forward voltage: 1.3V, Max. forward impulse current: 125A, Leakage current: 500µA, Kind of package: tube.
Інші пропозиції FEPB16FT-E3/81
| Фото | Назва | Виробник | Інформація |
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FEPB16FT-E3/81 | Виробник : Vishay |
 Rectifier Diode Switching 300V 16A 50ns 3-Pin(2+Tab) TO-263AB T/R |
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FEPB16FT-E3/81 | Виробник : Vishay Semiconductor Diodes Division |
Description: DIODE ARRAY GP 300V 8A TO263AB |
товар відсутній |
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| FEPB16FT-E3/81 | Виробник : VISHAY |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 300V; 8Ax2; 50ns; D2PAK; Ufmax: 1.3V; tube Type of diode: rectifying Mounting: SMD Max. off-state voltage: 300V Load current: 8A x2 Reverse recovery time: 50ns Semiconductor structure: common cathode; double Features of semiconductor devices: glass passivated; ultrafast switching Capacitance: 85pF Case: D2PAK Max. forward voltage: 1.3V Max. forward impulse current: 125A Leakage current: 500µA Kind of package: tube |
товар відсутній |