Продукція > IOR > IRF6691TR1PBF

IRF6691TR1PBF IOR


IRF6691(TR)PbF.pdf Виробник: IOR
2007
на замовлення 490 шт:

термін постачання 14-28 дні (днів)
Відгуки про товар
Написати відгук

Технічний опис IRF6691TR1PBF IOR

Description: MOSFET N-CH 20V 32A DIRECTFET, Packaging: Tape & Reel (TR), Package / Case: DirectFET™ Isometric MT, Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V, Power Dissipation (Max): 2.8W (Ta), 89W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DIRECTFET™ MT, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V.

Інші пропозиції IRF6691TR1PBF

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
IRF6691TR1PBF IRF6691TR1PBF Виробник : Infineon Technologies IRF6691(TR)PbF.pdf Description: MOSFET N-CH 20V 32A DIRECTFET
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V
товар відсутній
IRF6691TR1PBF IRF6691TR1PBF Виробник : Infineon Technologies IRF6691(TR)PbF.pdf Description: MOSFET N-CH 20V 32A DIRECTFET
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric MT
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V
Power Dissipation (Max): 2.8W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DIRECTFET™ MT
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 6580 pF @ 10 V
товар відсутній