IRF7379TRPBF

IRF7379TRPBF Infineon / IR


irf7379pbf-1732636.pdf Виробник: Infineon / IR
MOSFET MOSFT DUAL N/PCh 30V 5.8A
на замовлення 2003 шт:

термін постачання 21-30 дні (днів)
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Технічний опис IRF7379TRPBF Infineon / IR

Description: MOSFET N/P-CH 30V 8-SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.5W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V, Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V, Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: 8-SO, Part Status: Obsolete.

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IRF7379TRPBF IRF7379TRPBF Виробник : INFINEON TECHNOLOGIES irf7379pbf.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
кількість в упаковці: 4000 шт
товар відсутній
IRF7379TRPBF IRF7379TRPBF Виробник : Infineon Technologies irf7379.pdf Trans MOSFET N/P-CH Si 30V 5.8A/4.3A 8-Pin SOIC T/R
товар відсутній
IRF7379TRPBF IRF7379TRPBF Виробник : Infineon Technologies irf7379pbf.pdf?fileId=5546d462533600a4015355f9cbf21b85 Description: MOSFET N/P-CH 30V 8-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
товар відсутній
IRF7379TRPBF IRF7379TRPBF Виробник : Infineon Technologies irf7379pbf.pdf?fileId=5546d462533600a4015355f9cbf21b85 Description: MOSFET N/P-CH 30V 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5.8A, 4.3A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 25V
Rds On (Max) @ Id, Vgs: 45mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
товар відсутній
IRF7379TRPBF IRF7379TRPBF Виробник : INFINEON TECHNOLOGIES irf7379pbf.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30/-30V; 5.8/-4.3A; 2.5W; SO8
Type of transistor: N/P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30/-30V
Drain current: 5.8/-4.3A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 45/90mΩ
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
товар відсутній