IRF7380PBF Infineon Technologies
Виробник: Infineon TechnologiesDescription: MOSFET 2N-CH 80V 3.6A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 3.6A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V
Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SO
Part Status: Discontinued at Digi-Key
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Технічний опис IRF7380PBF Infineon Technologies
Description: MOSFET 2N-CH 80V 3.6A 8SO, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 3.6A, Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 25V, Rds On (Max) @ Id, Vgs: 73mOhm @ 2.2A, 10V, Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-SO, Part Status: Discontinued at Digi-Key.
Інші пропозиції IRF7380PBF
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IRF7380PBF | Виробник : Infineon Technologies |
MOSFET 80V DUAL N-CH HEXFET 73mOhm VGS 10V |
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IRF7380PBF | Виробник : Infineon (IRF) |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 80V; 3.6A; 2W; SO8 Type of transistor: N-MOSFET x2 Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 80V Drain current: 3.6A Power dissipation: 2W Case: SO8 Gate-source voltage: ±20V On-state resistance: 73mΩ Mounting: SMD Gate charge: 15nC Kind of channel: enhanced |
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