Інші пропозиції IRF7749L2TRPBF
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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IRF7749L2TRPBF | Виробник : Infineon Technologies |
 Trans MOSFET N-CH Si 60V 33A 15-Pin Direct-FET L8 T/R |
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IRF7749L2TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
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IRF7749L2TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 33A DIRECTFET Packaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V |
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IRF7749L2TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 33A DIRECTFET Packaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric L8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 375A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 120A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DirectFET™ Isometric L8 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 300 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12320 pF @ 25 V |
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IRF7749L2TRPBF | Виробник : Infineon / IR |
MOSFET 60V 1 N-CH HEXFET 1.5mOhms 200nC |
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IRF7749L2TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; 125W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 125W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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