IRFH5406TRPBF INFINEON
Виробник: INFINEONDescription: INFINEON - IRFH5406TRPBF - Leistungs-MOSFET, n-Kanal, 60 V, 40 A, 0.0114 ohm, PQFN, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60
Dauer-Drainstrom Id: 40
Rds(on)-Messspannung Vgs: 10
MSL: MSL 2 - 1 Jahr
Verlustleistung Pd: 46
Bauform - Transistor: PQFN
Anzahl der Pins: 8
Produktpalette: HEXFET
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0114
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 4
SVHC: No SVHC (08-Jul-2021)
на замовлення 926 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 143.76 грн |
| 10+ | 128.28 грн |
| 100+ | 100.26 грн |
| 500+ | 76.67 грн |
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Технічний опис IRFH5406TRPBF INFINEON
Description: MOSFET N-CH 60V 11A/40A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V, Power Dissipation (Max): 3.6W (Ta), 46W (Tc), Vgs(th) (Max) @ Id: 4V @ 50µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 25 V.
Інші пропозиції IRFH5406TRPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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IRFH5406TRPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R |
товар відсутній |
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IRFH5406TRPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R |
товар відсутній |
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IRFH5406TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced кількість в упаковці: 4000 шт |
товар відсутній |
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 |
IRFH5406TRPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R |
товар відсутній |
|
|
|
IRFH5406TRPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R |
товар відсутній |
|
|
|
IRFH5406TRPBF | Виробник : Infineon Technologies |
Trans MOSFET N-CH 60V 11A 8-Pin PQFN EP T/R |
товар відсутній |
|
 |
IRFH5406TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 11A/40A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 25 V |
товар відсутній |
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IRFH5406TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 60V 11A/40A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 14.4mOhm @ 24A, 10V Power Dissipation (Max): 3.6W (Ta), 46W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: 8-PQFN (5x6) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 25 V |
товар відсутній |
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IRFH5406TRPBF | Виробник : Infineon Technologies |
MOSFET 60V 1 N-CH HEXFET 14.4mOhms 23nC |
товар відсутній |
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IRFH5406TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 11A; 3.6W; PQFN5X6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Power dissipation: 3.6W Case: PQFN5X6 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
товар відсутній |