IRFR3710ZPBF

IRFR3710ZPBF Infineon Technologies


651infineon-irfr3710z-ds-v01_02-en.pdffileid5546d462533600a401535631.pdf Виробник: Infineon Technologies
Trans MOSFET N-CH Si 100V 56A 3-Pin(2+Tab) DPAK Tube
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Технічний опис IRFR3710ZPBF Infineon Technologies

Description: MOSFET N-CH 100V 42A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 42A (Tc), Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V, Power Dissipation (Max): 140W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-252AA (DPAK), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V.

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IRFR3710ZPBF IRFR3710ZPBF Виробник : Infineon Technologies irfr3710zpbf.pdf?fileId=5546d462533600a401535631b29d20cb Description: MOSFET N-CH 100V 42A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 33A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 25 V
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IRFR3710ZPBF IRFR3710ZPBF Виробник : Infineon Technologies Infineon_IRFR3710Z_DS_v01_02_EN-3166416.pdf MOSFET 100V 1 N-CH HEXFET 18mOhms 69nC
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IRFR3710ZPBF IRFR3710ZPBF Виробник : Infineon (IRF) irfr3710z.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 56A; 140W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 56A
Power dissipation: 140W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 69nC
Kind of channel: enhanced
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