Технічний опис IRG4BC30K-SPBF IR - ASA only Supplier
Description: IGBT 600V 28A 100W D2PAK, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A, Supplier Device Package: D2PAK, Td (on/off) @ 25°C: 26ns/130ns, Switching Energy: 360µJ (on), 510µJ (off), Test Condition: 480V, 16A, 23Ohm, 15V, Gate Charge: 67 nC, Current - Collector (Ic) (Max): 28 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 100 W.
Інші пропозиції IRG4BC30K-SPBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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IRG4BC30K-SPBF | Виробник : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 28A 100000mW 3-Pin(2+Tab) D2PAK |
товар відсутній |
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IRG4BC30K-SPBF | Виробник : Infineon Technologies |
Description: IGBT 600V 28A 100W D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 16A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 26ns/130ns Switching Energy: 360µJ (on), 510µJ (off) Test Condition: 480V, 16A, 23Ohm, 15V Gate Charge: 67 nC Current - Collector (Ic) (Max): 28 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 100 W |
товар відсутній |
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IRG4BC30K-SPBF | Виробник : Infineon / IR |
IGBT Transistors 600V ULTRAFAST 8-25KHZ DSCRETE IGBT |
товар відсутній |