IRGIB10B60KD1P

IRGIB10B60KD1P Infineon Technologies


irgib10b60kd1p.pdf?fileId=5546d462533600a401535652413b242e Виробник: Infineon Technologies
Description: IGBT 600V 16A 44W TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 156µJ (on), 165µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 41 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 44 W
на замовлення 14100 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
176+112.25 грн
Мінімальне замовлення: 176
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Технічний опис IRGIB10B60KD1P Infineon Technologies

Description: IGBT 600V 16A 44W TO220FP, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 79 ns, Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A, Supplier Device Package: TO-220AB Full-Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/180ns, Switching Energy: 156µJ (on), 165µJ (off), Test Condition: 400V, 10A, 50Ohm, 15V, Gate Charge: 41 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 16 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 32 A, Power - Max: 44 W.

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IRGIB10B60KD1P IRGIB10B60KD1P Виробник : Infineon Technologies 2224irgib10b60kd1p.pdf Trans IGBT Chip N-CH 600V 16A 44000mW 3-Pin(3+Tab) TO-220 Full-Pack Tube
товар відсутній
IRGIB10B60KD1P IRGIB10B60KD1P Виробник : Infineon Technologies irgib10b60kd1p.pdf?fileId=5546d462533600a401535652413b242e Description: IGBT 600V 16A 44W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 79 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 10A
Supplier Device Package: TO-220AB Full-Pak
IGBT Type: NPT
Td (on/off) @ 25°C: 25ns/180ns
Switching Energy: 156µJ (on), 165µJ (off)
Test Condition: 400V, 10A, 50Ohm, 15V
Gate Charge: 41 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 16 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 32 A
Power - Max: 44 W
товар відсутній
IRGIB10B60KD1P IRGIB10B60KD1P Виробник : Infineon / IR Infineon-IRGIB10B60KD1-DataSheet-v01_00-EN-1228181.pdf IGBT Transistors 600V Low-Vceon
товар відсутній