IRLH5034TRPBF Infineon Technologies
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
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Технічний опис IRLH5034TRPBF Infineon Technologies
Description: MOSFET N-CH 40V 29A/100A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc), Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V, Power Dissipation (Max): 3.6W (Ta), 156W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 150µA, Supplier Device Package: 8-PQFN (5x6), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V.
Інші пропозиції IRLH5034TRPBF
| Фото | Назва | Виробник | Інформація |
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IRLH5034TRPBF | Виробник : INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6 Mounting: SMD Power dissipation: 3.6W Polarisation: unipolar Technology: HEXFET® Features of semiconductor devices: logic level Drain current: 29A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Case: PQFN5X6 кількість в упаковці: 1 шт |
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IRLH5034TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 29A/100A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 150µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V |
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IRLH5034TRPBF | Виробник : Infineon Technologies |
Description: MOSFET N-CH 40V 29A/100A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 150µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4730 pF @ 25 V |
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IRLH5034TRPBF | Виробник : Infineon Technologies |
MOSFET 40V 1 N-CH HEXFET PWR MOSFET 2.4mOhms |
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IRLH5034TRPBF | Виробник : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 3.6W; PQFN5X6 Mounting: SMD Power dissipation: 3.6W Polarisation: unipolar Technology: HEXFET® Features of semiconductor devices: logic level Drain current: 29A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Case: PQFN5X6 |
товар відсутній |