Технічний опис IRLIB9343PBF Infineon / IR
Description: MOSFET P-CH 55V 14A TO220AB FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V, Power Dissipation (Max): 33W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: TO-220AB Full-Pak, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V.
Інші пропозиції IRLIB9343PBF
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
IRLIB9343PBF | Виробник : Infineon Technologies |
 Trans MOSFET P-CH Si 55V 14A 3-Pin(3+Tab) TO-220FP Tube |
товар відсутній |
|
 |
IRLIB9343PBF | Виробник : Infineon Technologies |
Description: MOSFET P-CH 55V 14A TO220AB FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V Power Dissipation (Max): 33W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: TO-220AB Full-Pak Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V |
товар відсутній |