JANTXV1N6640US Microchip Technology
Виробник: Microchip Technology
Description: DIODE GEN PURP 50V 300MA D-5D
Packaging: Bulk
Package / Case: SQ-MELF, D
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 50 V
Description: DIODE GEN PURP 50V 300MA D-5D
Packaging: Bulk
Package / Case: SQ-MELF, D
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 300mA
Supplier Device Package: D-5D
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 90 µA @ 50 V
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Технічний опис JANTXV1N6640US Microchip Technology
Description: DIODE GEN PURP 50V 300MA D-5D, Packaging: Bulk, Package / Case: SQ-MELF, D, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 4 ns, Technology: Standard, Current - Average Rectified (Io): 300mA, Supplier Device Package: D-5D, Operating Temperature - Junction: -65°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 50 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA, Current - Reverse Leakage @ Vr: 90 µA @ 50 V.
Інші пропозиції JANTXV1N6640US
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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JANTXV1N6640US | Виробник : Microchip Technology | Diodes - General Purpose, Power, Switching Switching Diode |
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