Технічний опис MCH6342-TL-H ON Semiconductor
Description: MOSFET P-CH 30V 4.5A 6MCPH, Packaging: Tape & Reel (TR), Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 4.5V, Power Dissipation (Max): 1.5W (Ta), Supplier Device Package: 6-MCPH, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V.
Інші пропозиції MCH6342-TL-H
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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MCH6342-TL-H Код товару: 151614 |
Транзистори > Польові P-канальні |
товар відсутній
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MCH6342-TL-H | Виробник : ON Semiconductor |
Trans MOSFET P-CH Si 30V 4.5A 6-Pin MCPH T/R |
товар відсутній |
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MCH6342-TL-H | Виробник : onsemi |
Description: MCH6342 - SINGLE P-CHANNEL POWER Packaging: Bulk Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 4.5V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 6-MCPH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V |
товар відсутній |
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MCH6342-TL-H | Виробник : onsemi |
Description: MOSFET P-CH 30V 4.5A 6MCPH Packaging: Tape & Reel (TR) Package / Case: 6-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 73mOhm @ 2A, 4.5V Power Dissipation (Max): 1.5W (Ta) Supplier Device Package: 6-MCPH Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 10 V |
товар відсутній |