Технічний опис PMBFJ112,215 NXP Semiconductors
Description: JFET N-CH 40V SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS), Voltage - Breakdown (V(BR)GSS): 40 V, Supplier Device Package: SOT-23 (TO-236AB), Part Status: Obsolete, Drain to Source Voltage (Vdss): 40 V, Power - Max: 300 mW, Resistance - RDS(On): 50 Ohms, Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA, Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V.
Інші пропозиції PMBFJ112,215
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
 |
PMBFJ112,215 | Виробник : NXP USA Inc. |
 Description: JFET N-CH 40V SOT23Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 6pF @ 10V (VGS) Voltage - Breakdown (V(BR)GSS): 40 V Supplier Device Package: SOT-23 (TO-236AB) Part Status: Obsolete Drain to Source Voltage (Vdss): 40 V Power - Max: 300 mW Resistance - RDS(On): 50 Ohms Voltage - Cutoff (VGS off) @ Id: 5 V @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 5 mA @ 15 V |
товар відсутній |
|
 |
PMBFJ112,215 | Виробник : NXP Semiconductors |
RF JFET Transistors TAPE7 FET-RFSS |
товар відсутній |