на замовлення 13271 шт:
термін постачання 287-296 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.4 грн |
| 11+ | 27.31 грн |
| 100+ | 17.2 грн |
| 500+ | 13.5 грн |
| 1000+ | 12.2 грн |
| 9000+ | 11.94 грн |
| 24000+ | 11.49 грн |
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Технічний опис SiA928DJ-T1-GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 30V 4.5A SC70-6, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 7.8W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V, Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active.
Інші пропозиції SiA928DJ-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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SIA928DJ-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 30V 4.5A 6-Pin PowerPAK SC-70 EP T/R |
товар відсутній |
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| SiA928DJ-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A Mounting: SMD Kind of package: reel; tape Drain current: 4.5A Power dissipation: 7.8W Drain-source voltage: 30V Polarisation: unipolar Gate charge: 10nC Technology: TrenchFET® Kind of channel: enhanced Type of transistor: N-MOSFET x2 Pulsed drain current: 30A On-state resistance: 33mΩ кількість в упаковці: 3000 шт |
товар відсутній |
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SiA928DJ-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.5A SC70-6 Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
товар відсутній |
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SiA928DJ-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 4.5A SC70-6 Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 7.8W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 490pF @ 15V Rds On (Max) @ Id, Vgs: 25mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.5nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active |
товар відсутній |
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| SiA928DJ-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 4.5A; Idm: 30A Mounting: SMD Kind of package: reel; tape Drain current: 4.5A Power dissipation: 7.8W Drain-source voltage: 30V Polarisation: unipolar Gate charge: 10nC Technology: TrenchFET® Kind of channel: enhanced Type of transistor: N-MOSFET x2 Pulsed drain current: 30A On-state resistance: 33mΩ |
товар відсутній |