SISS26LDN-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK
Packaging: Cut Tape (CT)
Package / Case: PowerPAK® 1212-8S
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V
Power Dissipation (Max): 4.8W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerPAK® 1212-8S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V
на замовлення 1119 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
4+ | 82.05 грн |
10+ | 64.93 грн |
100+ | 50.47 грн |
500+ | 40.14 грн |
1000+ | 32.7 грн |
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Технічний опис SISS26LDN-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK, Packaging: Tape & Reel (TR), Package / Case: PowerPAK® 1212-8S, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc), Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V, Power Dissipation (Max): 4.8W (Ta), 57W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerPAK® 1212-8S, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V.
Інші пропозиції SISS26LDN-T1-GE3 за ціною від 33.71 грн до 89.27 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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SISS26LDN-T1-GE3 | Виробник : Vishay / Siliconix | MOSFET Nch 60V Vds 20V Vgs PowerPAK 1212-8S |
на замовлення 231360 шт: термін постачання 21-30 дні (днів) |
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SISS26LDN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W Case: PowerPAK® 1212-8 Mounting: SMD On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 60V Drain current: 65A кількість в упаковці: 1 шт |
товар відсутній |
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SISS26LDN-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 60V 23.7A/81.2A PPAK Packaging: Tape & Reel (TR) Package / Case: PowerPAK® 1212-8S Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 81.2A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 15A, 10V Power Dissipation (Max): 4.8W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerPAK® 1212-8S Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1980 pF @ 30 V |
товар відсутній |
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SISS26LDN-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 65A; Idm: 150A; 36W Case: PowerPAK® 1212-8 Mounting: SMD On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 48nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 150A Drain-source voltage: 60V Drain current: 65A |
товар відсутній |