SQM40031EL_GE3 Vishay Semiconductors
на замовлення 8824 шт:
термін постачання 661-670 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 202.39 грн |
10+ | 179.02 грн |
100+ | 127.96 грн |
500+ | 108.84 грн |
800+ | 91.69 грн |
2400+ | 86.41 грн |
4800+ | 83.77 грн |
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Технічний опис SQM40031EL_GE3 Vishay Semiconductors
Description: MOSFET P-CH 40V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263 (D²Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V.
Інші пропозиції SQM40031EL_GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SQM40031EL_GE3 | Виробник : Vishay | Trans MOSFET P-CH 40V 120A Automotive 3-Pin(2+Tab) TO-263 |
товар відсутній |
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SQM40031EL_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 40V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V |
товар відсутній |
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SQM40031EL_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 40V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D²Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 800 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 39000 pF @ 25 V |
товар відсутній |