SSM6N7002BFU,LF Toshiba Semiconductor and Storage

Description: MOSFET 2N-CH 60V 0.2A US6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 300mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 200mA, Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 25V, Rds On (Max) @ Id, Vgs: 2.1Ohm @ 500mA, 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3.1V @ 250µA, Supplier Device Package: US6, Part Status: Obsolete.