Технічний опис STD10NM50N STMicroelectronics
Description: MOSFET N-CH 500V 7A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 630mOhm @ 3.5A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 50 V.
Інші пропозиції STD10NM50N
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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STD10NM50N | Виробник : STMicroelectronics |
 Trans MOSFET N-CH 500V 7A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
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STD10NM50N | Виробник : STMicroelectronics |
Description: MOSFET N-CH 500V 7A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 630mOhm @ 3.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 50 V |
товар відсутній |