.jpg "STD4N62K3")
STD4N62K3 STMicroelectronics
Виробник: STMicroelectronicsDescription: MOSFET N-CH 620V 3.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 1.9A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 620 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 50 V
на замовлення 2500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2500+ | 57.09 грн |
Відгуки про товар
Написати відгук
Технічний опис STD4N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 3.8A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 1.95Ohm @ 1.9A, 10V, Power Dissipation (Max): 70W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: DPAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 50 V.
Інші пропозиції STD4N62K3 за ціною від 50.35 грн до 135.51 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
STD4N62K3 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 620V 3.8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 1.95Ohm @ 1.9A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 50 V |
на замовлення 2500 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
STD4N62K3 | Виробник : STMicroelectronics |
MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3 |
на замовлення 228 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
STD4N62K3 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 620V 3.8A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
|||||||||||||||||
| STD4N62K3 | Виробник : STMicroelectronics |
Trans MOSFET N-CH 620V 3.8A 3-Pin(2+Tab) DPAK T/R |
товар відсутній |
||||||||||||||||||
 |
STD4N62K3 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 2A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2000mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |
|||||||||||||||||
|
|
STD4N62K3 | Виробник : STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 620V; 2A; 70W; DPAK Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 620V Drain current: 2A Power dissipation: 70W Case: DPAK Gate-source voltage: ±30V On-state resistance: 2000mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
товар відсутній |