Технічний опис STI6N62K3 STMicroelectronics
Description: MOSFET N-CH 620V 5.5A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V, Power Dissipation (Max): 90W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: I2PAK, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 620 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V.
Інші пропозиції STI6N62K3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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STI6N62K3 | Виробник : STMicroelectronics |
на замовлення 1000 шт: термін постачання 14-28 дні (днів) |
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STI6N62K3 | Виробник : STMicroelectronics | Trans MOSFET N-CH 620V 5.5A 3-Pin(3+Tab) I2PAK Tube |
товар відсутній |
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STI6N62K3 | Виробник : STMicroelectronics | Trans MOSFET N-CH 620V 5.5A 3-Pin(3+Tab) I2PAK Tube |
товар відсутній |
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STI6N62K3 | Виробник : STMicroelectronics |
Description: MOSFET N-CH 620V 5.5A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 2.8A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: I2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 620 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 875 pF @ 50 V |
товар відсутній |