YJ10N60CZ YANGJIE TECHNOLOGY
Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
кількість в упаковці: 1 шт
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 178W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.8Ω
Mounting: THT
Gate charge: 65nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
кількість в упаковці: 1 шт
товар відсутній
Відгуки про товар
Написати відгук
Технічний опис YJ10N60CZ YANGJIE TECHNOLOGY
Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 10A, Pulsed drain current: 40A, Power dissipation: 178W, Case: TO220AB, Gate-source voltage: ±20V, On-state resistance: 0.8Ω, Mounting: THT, Gate charge: 65nC, Kind of package: tube, Kind of channel: enhanced, Heatsink thickness: max. 1.33mm, кількість в упаковці: 1 шт.
Інші пропозиції YJ10N60CZ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
|
|
YJ10N60CZ | Виробник : YANGJIE TECHNOLOGY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10A; Idm: 40A; 178W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10A Pulsed drain current: 40A Power dissipation: 178W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.8Ω Mounting: THT Gate charge: 65nC Kind of package: tube Kind of channel: enhanced Heatsink thickness: max. 1.33mm |
товар відсутній |