YJ4N65CZ

YJ4N65CZ YANGJIE TECHNOLOGY


Виробник: YANGJIE TECHNOLOGY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
кількість в упаковці: 1 шт
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Технічний опис YJ4N65CZ YANGJIE TECHNOLOGY

Category: THT N channel transistors, Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 650V, Drain current: 4A, Pulsed drain current: 16A, Power dissipation: 100W, Case: TO220AB, Gate-source voltage: ±20V, On-state resistance: 2.6Ω, Mounting: THT, Gate charge: 20nC, Kind of package: tube, Kind of channel: enhanced, Heatsink thickness: max. 1.33mm, кількість в упаковці: 1 шт.

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YJ4N65CZ YJ4N65CZ Виробник : YANGJIE TECHNOLOGY Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 100W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 100W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.6Ω
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.33mm
товар відсутній