YJD80G06A YANGJIE TECHNOLOGY

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; SPLIT GATE TRENCH; unipolar; 60V; 56A; 42.5W, Type of transistor: N-MOSFET, Technology: SPLIT GATE TRENCH, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 56A, Pulsed drain current: 240A, Power dissipation: 42.5W, Case: TO252, Gate-source voltage: ±20V, On-state resistance: 11mΩ, Mounting: SMD, Gate charge: 31nC, Kind of package: reel; tape, Kind of channel: enhanced.