YJL2312A

YJL2312A Yangjie Technology


Виробник: Yangjie Technology
Description: SOT-23 N 20V 6.8A Transistors F
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V
на замовлення 300000 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
3000+2.5 грн
15000+ 2.27 грн
30000+ 2.13 грн
60000+ 1.87 грн
120000+ 1.68 грн
300000+ 1.61 грн
Мінімальне замовлення: 3000
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Технічний опис YJL2312A Yangjie Technology

Description: SOT-23 N 20V 6.8A Transistors F, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta), Rds On (Max) @ Id, Vgs: 18mOhm @ 6.8A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 11.05 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 888 pF @ 10 V.

Інші пропозиції YJL2312A

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
YJL2312A YJL2312A Виробник : YANGJIE TECHNOLOGY YJL2312A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 4.6nC
Technology: TRENCH POWER LV
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
кількість в упаковці: 10 шт
товар відсутній
YJL2312A YJL2312A Виробник : YANGJIE TECHNOLOGY YJL2312A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TRENCH POWER LV; unipolar; 20V; 5.4A; 1.2W
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 1.2W
Polarisation: unipolar
Gate charge: 4.6nC
Technology: TRENCH POWER LV
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 27A
Case: SOT23
Drain-source voltage: 20V
Drain current: 5.4A
On-state resistance: 39mΩ
Type of transistor: N-MOSFET
товар відсутній