Продукція > PANJIT SEMICONDUCTOR > Всі товари виробника PANJIT SEMICONDUCTOR (1470) > Сторінка 12 з 25
Фото | Назва | Виробник | Інформація |
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P4SMAJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Manufacturer series: P4SMAJ кількість в упаковці: 1 шт |
на замовлення 1800 шт: термін постачання 7-14 дні (днів) |
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P4SMAJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SMA Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Manufacturer series: P4SMAJ |
на замовлення 1800 шт: термін постачання 21-30 дні (днів) |
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P4SMAJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ кількість в упаковці: 5 шт |
на замовлення 1690 шт: термін постачання 7-14 дні (днів) |
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P4SMAJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7V Max. forward impulse current: 43.5A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P4SMAJ |
на замовлення 1690 шт: термін постачання 21-30 дні (днів) |
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P6SMB18A-AU_R1_006A1 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB |
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P6SMB18A-AU_R2_006A1 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB |
товар відсутній |
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P6SMB18A-AU_R1_006A1 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB кількість в упаковці: 1 шт |
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P6SMB18A-AU_R2_006A1 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15.3V Breakdown voltage: 17.1...18.9V Max. forward impulse current: 24A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB кількість в упаковці: 1 шт |
товар відсутній |
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P6SMB30CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB |
на замовлення 710 шт: термін постачання 21-30 дні (днів) |
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P6SMB30CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 25.6V Breakdown voltage: 28.5...31.5V Max. forward impulse current: 14.4A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB кількість в упаковці: 5 шт |
на замовлення 710 шт: термін постачання 7-14 дні (днів) |
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P6SMB36CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB |
на замовлення 480 шт: термін постачання 21-30 дні (днів) |
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P6SMB36CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB |
товар відсутній |
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P6SMB36CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB кількість в упаковці: 5 шт |
на замовлення 480 шт: термін постачання 7-14 дні (днів) |
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P6SMB36CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30.8V Breakdown voltage: 34.2...37.8V Max. forward impulse current: 12A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB кількість в упаковці: 1 шт |
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P6SMB39CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1...41V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB |
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P6SMB39CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33.3V Breakdown voltage: 37.1...41V Max. forward impulse current: 11.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMB кількість в упаковці: 1 шт |
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P6SMBJ10CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 35.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 800 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ10CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 10V Breakdown voltage: 11.1...12.3V Max. forward impulse current: 35.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 5µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ15CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 790 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ15CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 15V Breakdown voltage: 16.7...18.5V Max. forward impulse current: 24A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 790 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ20CAS_R2_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
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P6SMBJ20CAS_R2_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 20V Breakdown voltage: 22.2...24.5V Max. forward impulse current: 18.6A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ |
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P6SMBJ26CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMBJ |
товар відсутній |
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P6SMBJ26CA-AU_R2_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 26V Breakdown voltage: 28.9...31.9V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
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P6SMBJ28A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 795 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ28A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ28CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMBJ |
товар відсутній |
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P6SMBJ28CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 28V Breakdown voltage: 31.1...34.4V Max. forward impulse current: 13.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
товар відсутній |
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P6SMBJ30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 800 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ30A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 30V Breakdown voltage: 33.3...36.8V Max. forward impulse current: 12.4A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 800 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ33A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ33CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMBJ |
на замовлення 180 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ33CA-AU_R1_000A1 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Application: automotive industry Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 180 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ33CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
товар відсутній |
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P6SMBJ33CA_R2_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 33V Breakdown voltage: 36.7...40.6V Max. forward impulse current: 11.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ |
товар відсутній |
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 775 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ36CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 36V Breakdown voltage: 40...44.2V Max. forward impulse current: 10.3A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 775 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ40CA_R2_00001 | PanJit Semiconductor | P6SMBJ40CA-R2 Bidirectional SMD transil diodes |
на замовлення 6000 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ48A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ кількість в упаковці: 1 шт |
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P6SMBJ48A_R2_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 48V Breakdown voltage: 53.3...58.9V Max. forward impulse current: 7.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Manufacturer series: P6SMBJ |
товар відсутній |
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 695 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ5.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 695 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 755 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ5.0CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 5V Breakdown voltage: 6.4...7.07V Max. forward impulse current: 65.2A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 1.6mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 755 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 795 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ6.0A_R1_00001 | PanJit Semiconductor |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 6V Breakdown voltage: 6.67...7.37V Max. forward impulse current: 58.3A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 0.8mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 795 шт: термін постачання 21-30 дні (днів) |
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ кількість в упаковці: 5 шт |
на замовлення 800 шт: термін постачання 7-14 дні (днів) |
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P6SMBJ7.5CA_R1_00001 | PanJit Semiconductor |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 7.5V Breakdown voltage: 8.33...9.21V Max. forward impulse current: 46.5A Semiconductor structure: bidirectional Case: SMB Mounting: SMD Leakage current: 0.2mA Kind of package: reel; tape Features of semiconductor devices: glass passivated Manufacturer series: P6SMBJ |
на замовлення 800 шт: термін постачання 21-30 дні (днів) |
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Power dissipation: 1.25W Polarisation: bipolar Case: SOT23 Frequency: 100MHz Collector-emitter voltage: 100V Current gain: 100...300 Collector current: 1A Pulsed collector current: 3A Type of transistor: NPN |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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PBHV8110DA-AU_R1_000A1 | PanJit Semiconductor |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23 Mounting: SMD Power dissipation: 1.25W Polarisation: bipolar Case: SOT23 Frequency: 100MHz Collector-emitter voltage: 100V Current gain: 100...300 Collector current: 1A Pulsed collector current: 3A Type of transistor: NPN кількість в упаковці: 5 шт |
на замовлення 3000 шт: термін постачання 7-14 дні (днів) |
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PCDB0665G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Mounting: SMD Power dissipation: 62.5W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263 Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 320A Leakage current: 50µA кількість в упаковці: 1 шт |
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PCDB0665G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape Mounting: SMD Power dissipation: 62.5W Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Case: TO263 Max. off-state voltage: 650V Max. load current: 28A Max. forward voltage: 1.8V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 320A Leakage current: 50µA |
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PCDB0865G1_R2_00001 | PanJit Semiconductor | PCDB0865G1-R2 SMD Schottky diodes |
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PCDB10120G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 76A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO263 Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 640A Power dissipation: 164.8W кількість в упаковці: 1 шт |
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PCDB10120G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 1.2kV Load current: 10A Max. load current: 76A Semiconductor structure: single diode Max. forward voltage: 2V Case: TO263 Kind of package: reel; tape Leakage current: 0.1mA Max. forward impulse current: 640A Power dissipation: 164.8W |
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PCDB1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 40A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 0.55kA кількість в упаковці: 1 шт |
товар відсутній |
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PCDB1065G1_R2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 650V Load current: 10A Max. load current: 40A Semiconductor structure: single diode Max. forward voltage: 1.8V Case: TO263 Kind of package: reel; tape Leakage current: 50µA Max. forward impulse current: 0.55kA |
товар відсутній |
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PCDB20120G1_R2_00001 | PanJit Semiconductor | PCDB20120G1-R2 SMD Schottky diodes |
товар відсутній |
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PCDD0465G1_L2_00001 | PanJit Semiconductor |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 20A Power dissipation: 46W Semiconductor structure: single diode Case: TO252AA Kind of package: reel; tape Max. forward impulse current: 280A Max. forward voltage: 1.8V Leakage current: 40µA кількість в упаковці: 1 шт |
товар відсутній |
P4SMAJ5.0A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
кількість в упаковці: 1 шт
на замовлення 1800 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
10+ | 27.25 грн |
15+ | 18.31 грн |
25+ | 12.49 грн |
100+ | 8.44 грн |
186+ | 5.31 грн |
510+ | 5.06 грн |
1800+ | 4.98 грн |
P4SMAJ5.0A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; unidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SMA
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Manufacturer series: P4SMAJ
на замовлення 1800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
17+ | 22.71 грн |
24+ | 14.69 грн |
34+ | 10.4 грн |
100+ | 7.03 грн |
186+ | 4.43 грн |
510+ | 4.22 грн |
1800+ | 4.15 грн |
P4SMAJ5.0CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
кількість в упаковці: 5 шт
на замовлення 1690 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.36 грн |
35+ | 8.41 грн |
100+ | 7.25 грн |
165+ | 6.16 грн |
450+ | 5.82 грн |
1800+ | 5.74 грн |
3600+ | 5.57 грн |
P4SMAJ5.0CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.4kW; 6.4÷7V; 43.5A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7V
Max. forward impulse current: 43.5A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P4SMAJ
на замовлення 1690 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.3 грн |
55+ | 6.75 грн |
100+ | 6.05 грн |
165+ | 5.13 грн |
450+ | 4.85 грн |
P6SMB18A-AU_R1_006A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
товар відсутній
P6SMB18A-AU_R2_006A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
товар відсутній
P6SMB18A-AU_R1_006A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 1 шт
товар відсутній
P6SMB18A-AU_R2_006A1 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 17.1÷18.9V; 24A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15.3V
Breakdown voltage: 17.1...18.9V
Max. forward impulse current: 24A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 1 шт
товар відсутній
P6SMB30CA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
на замовлення 710 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 9.28 грн |
100+ | 8.22 грн |
110+ | 7.66 грн |
295+ | 7.24 грн |
P6SMB30CA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 28.5÷31.5V; 14.4A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 25.6V
Breakdown voltage: 28.5...31.5V
Max. forward impulse current: 14.4A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 5 шт
на замовлення 710 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.56 грн |
100+ | 9.87 грн |
110+ | 9.2 грн |
295+ | 8.69 грн |
800+ | 8.35 грн |
P6SMB36CA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
на замовлення 480 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 9.28 грн |
100+ | 8.22 грн |
110+ | 7.73 грн |
295+ | 7.31 грн |
P6SMB36CA-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
товар відсутній
P6SMB36CA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 5 шт
на замовлення 480 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.56 грн |
100+ | 9.87 грн |
110+ | 9.28 грн |
295+ | 8.77 грн |
800+ | 8.44 грн |
P6SMB36CA-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 34.2÷37.8V; 12A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30.8V
Breakdown voltage: 34.2...37.8V
Max. forward impulse current: 12A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 1 шт
товар відсутній
P6SMB39CA-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
товар відсутній
P6SMB39CA-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 37.1÷41V; 11.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33.3V
Breakdown voltage: 37.1...41V
Max. forward impulse current: 11.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMB
кількість в упаковці: 1 шт
товар відсутній
P6SMBJ10CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 800 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.54 грн |
30+ | 10.16 грн |
100+ | 8.86 грн |
135+ | 7.25 грн |
370+ | 6.92 грн |
2400+ | 6.58 грн |
P6SMBJ10CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 11.1÷12.3V; 35.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 10V
Breakdown voltage: 11.1...12.3V
Max. forward impulse current: 35.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 5µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.45 грн |
45+ | 8.15 грн |
100+ | 7.38 грн |
135+ | 6.05 грн |
370+ | 5.76 грн |
P6SMBJ15CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 790 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.54 грн |
30+ | 10.16 грн |
100+ | 8.86 грн |
135+ | 7.34 грн |
370+ | 7 грн |
2400+ | 6.66 грн |
P6SMBJ15CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 16.7÷18.5V; 24A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 15V
Breakdown voltage: 16.7...18.5V
Max. forward impulse current: 24A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 790 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.45 грн |
45+ | 8.15 грн |
100+ | 7.38 грн |
135+ | 6.12 грн |
370+ | 5.83 грн |
P6SMBJ20CAS_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
товар відсутній
P6SMBJ20CAS_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 22.2÷24.5V; 18.6A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 20V
Breakdown voltage: 22.2...24.5V
Max. forward impulse current: 18.6A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товар відсутній
P6SMBJ26CA-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
товар відсутній
P6SMBJ26CA-AU_R2_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 28.9÷31.9V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 26V
Breakdown voltage: 28.9...31.9V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
товар відсутній
P6SMBJ28A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 795 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.54 грн |
35+ | 8.23 грн |
100+ | 7.17 грн |
170+ | 5.91 грн |
460+ | 5.57 грн |
2400+ | 5.4 грн |
P6SMBJ28A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 795 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.45 грн |
55+ | 6.61 грн |
100+ | 5.98 грн |
170+ | 4.92 грн |
460+ | 4.64 грн |
P6SMBJ28CA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
товар відсутній
P6SMBJ28CA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 31.1÷34.4V; 13.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 28V
Breakdown voltage: 31.1...34.4V
Max. forward impulse current: 13.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
товар відсутній
P6SMBJ30A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 800 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.54 грн |
35+ | 8.23 грн |
100+ | 7.17 грн |
170+ | 5.91 грн |
460+ | 5.65 грн |
2400+ | 5.4 грн |
P6SMBJ30A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 33.3÷36.8V; 12.4A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 30V
Breakdown voltage: 33.3...36.8V
Max. forward impulse current: 12.4A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.45 грн |
55+ | 6.61 грн |
100+ | 5.98 грн |
170+ | 4.92 грн |
460+ | 4.71 грн |
P6SMBJ33A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 800 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.54 грн |
35+ | 8.23 грн |
100+ | 7.17 грн |
170+ | 5.91 грн |
460+ | 5.65 грн |
2400+ | 5.4 грн |
P6SMBJ33A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.45 грн |
55+ | 6.61 грн |
100+ | 5.98 грн |
170+ | 4.92 грн |
460+ | 4.71 грн |
P6SMBJ33CA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
на замовлення 180 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 9.28 грн |
100+ | 8.22 грн |
110+ | 7.59 грн |
P6SMBJ33CA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Application: automotive industry
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 180 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 11.56 грн |
100+ | 9.87 грн |
110+ | 9.11 грн |
295+ | 8.6 грн |
800+ | 8.35 грн |
P6SMBJ33CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
товар відсутній
P6SMBJ33CA_R2_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 36.7÷40.6V; 11.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 33V
Breakdown voltage: 36.7...40.6V
Max. forward impulse current: 11.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товар відсутній
P6SMBJ36CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 775 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.54 грн |
30+ | 10.16 грн |
100+ | 8.86 грн |
135+ | 7.34 грн |
370+ | 6.92 грн |
2400+ | 6.58 грн |
P6SMBJ36CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 40÷44.2V; 10.3A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 36V
Breakdown voltage: 40...44.2V
Max. forward impulse current: 10.3A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 775 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.45 грн |
45+ | 8.15 грн |
100+ | 7.38 грн |
135+ | 6.12 грн |
370+ | 5.76 грн |
P6SMBJ40CA_R2_00001 |
Виробник: PanJit Semiconductor
P6SMBJ40CA-R2 Bidirectional SMD transil diodes
P6SMBJ40CA-R2 Bidirectional SMD transil diodes
на замовлення 6000 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
11+ | 26.44 грн |
141+ | 7 грн |
389+ | 6.58 грн |
P6SMBJ48A_R2_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
кількість в упаковці: 1 шт
товар відсутній
P6SMBJ48A_R2_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 53.3÷58.9V; 7.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 48V
Breakdown voltage: 53.3...58.9V
Max. forward impulse current: 7.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Manufacturer series: P6SMBJ
товар відсутній
P6SMBJ5.0A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 695 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.54 грн |
35+ | 8.23 грн |
100+ | 7.17 грн |
170+ | 5.91 грн |
460+ | 5.57 грн |
2400+ | 5.4 грн |
P6SMBJ5.0A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 695 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.45 грн |
55+ | 6.61 грн |
100+ | 5.98 грн |
170+ | 4.92 грн |
460+ | 4.64 грн |
P6SMBJ5.0CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 755 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.54 грн |
30+ | 10.16 грн |
100+ | 8.86 грн |
135+ | 7.34 грн |
370+ | 7 грн |
2400+ | 6.66 грн |
P6SMBJ5.0CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.4÷7.07V; 65.2A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 5V
Breakdown voltage: 6.4...7.07V
Max. forward impulse current: 65.2A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 1.6mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 755 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.45 грн |
45+ | 8.15 грн |
100+ | 7.38 грн |
135+ | 6.12 грн |
370+ | 5.83 грн |
P6SMBJ6.0A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 795 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 13.26 грн |
35+ | 8.67 грн |
100+ | 7.51 грн |
170+ | 5.91 грн |
460+ | 5.57 грн |
P6SMBJ6.0A_R1_00001 |
Виробник: PanJit Semiconductor
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Unidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 6.67÷7.37V; 58.3A; unidirectional; SMB; P6SMBJ
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 6V
Breakdown voltage: 6.67...7.37V
Max. forward impulse current: 58.3A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.8mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 795 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
35+ | 11.05 грн |
55+ | 6.96 грн |
100+ | 6.26 грн |
170+ | 4.92 грн |
460+ | 4.64 грн |
P6SMBJ7.5CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
кількість в упаковці: 5 шт
на замовлення 800 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
25+ | 12.54 грн |
30+ | 10.16 грн |
100+ | 8.86 грн |
135+ | 7.25 грн |
370+ | 6.83 грн |
2400+ | 6.58 грн |
P6SMBJ7.5CA_R1_00001 |
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 0.6kW; 8.33÷9.21V; 46.5A; bidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 7.5V
Breakdown voltage: 8.33...9.21V
Max. forward impulse current: 46.5A
Semiconductor structure: bidirectional
Case: SMB
Mounting: SMD
Leakage current: 0.2mA
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Manufacturer series: P6SMBJ
на замовлення 800 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
40+ | 10.45 грн |
45+ | 8.15 грн |
100+ | 7.38 грн |
135+ | 6.05 грн |
370+ | 5.69 грн |
PBHV8110DA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)Кількість | Ціна без ПДВ |
---|---|
70+ | 5.65 грн |
75+ | 4.72 грн |
225+ | 3.7 грн |
610+ | 3.5 грн |
3000+ | 3.49 грн |
PBHV8110DA-AU_R1_000A1 |
Виробник: PanJit Semiconductor
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
кількість в упаковці: 5 шт
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 1.25W; SOT23
Mounting: SMD
Power dissipation: 1.25W
Polarisation: bipolar
Case: SOT23
Frequency: 100MHz
Collector-emitter voltage: 100V
Current gain: 100...300
Collector current: 1A
Pulsed collector current: 3A
Type of transistor: NPN
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)Кількість | Ціна без ПДВ |
---|---|
45+ | 6.78 грн |
50+ | 5.88 грн |
225+ | 4.45 грн |
610+ | 4.2 грн |
3000+ | 4.19 грн |
9000+ | 4.05 грн |
PCDB0665G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
кількість в упаковці: 1 шт
товар відсутній
PCDB0665G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; TO263; reel,tape
Mounting: SMD
Power dissipation: 62.5W
Kind of package: reel; tape
Type of diode: Schottky rectifying
Technology: SiC
Case: TO263
Max. off-state voltage: 650V
Max. load current: 28A
Max. forward voltage: 1.8V
Load current: 6A
Semiconductor structure: single diode
Max. forward impulse current: 320A
Leakage current: 50µA
товар відсутній
PCDB10120G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 76A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO263
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 640A
Power dissipation: 164.8W
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 76A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO263
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 640A
Power dissipation: 164.8W
кількість в упаковці: 1 шт
товар відсутній
PCDB10120G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 76A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO263
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 640A
Power dissipation: 164.8W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 1.2kV; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Max. load current: 76A
Semiconductor structure: single diode
Max. forward voltage: 2V
Case: TO263
Kind of package: reel; tape
Leakage current: 0.1mA
Max. forward impulse current: 640A
Power dissipation: 164.8W
товар відсутній
PCDB1065G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 0.55kA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 0.55kA
кількість в упаковці: 1 шт
товар відсутній
PCDB1065G1_R2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 0.55kA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 650V; 10A; TO263; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Max. load current: 40A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO263
Kind of package: reel; tape
Leakage current: 50µA
Max. forward impulse current: 0.55kA
товар відсутній
PCDB20120G1_R2_00001 |
Виробник: PanJit Semiconductor
PCDB20120G1-R2 SMD Schottky diodes
PCDB20120G1-R2 SMD Schottky diodes
товар відсутній
PCDD0465G1_L2_00001 |
Виробник: PanJit Semiconductor
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 1 шт
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; TO252AA; reel,tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 46W
Semiconductor structure: single diode
Case: TO252AA
Kind of package: reel; tape
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 1 шт
товар відсутній