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PCDP0465G1_T0_00001 PCDP0465G1_T0_00001 PanJit Semiconductor PCDP0465G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 56W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 1 шт
товар відсутній
PCDP0465G1_T0_00001 PCDP0465G1_T0_00001 PanJit Semiconductor PCDP0465G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 56W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
товар відсутній
PCDP05120G1_T0_00001 PCDP05120G1_T0_00001 PanJit Semiconductor PCDP05120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 129.3W
Leakage current: 50µA
Max. forward impulse current: 520A
Semiconductor structure: single diode
Load current: 5A
Max. forward voltage: 2V
Max. load current: 40A
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
товар відсутній
PCDP05120G1_T0_00001 PCDP05120G1_T0_00001 PanJit Semiconductor PCDP05120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 129.3W
Leakage current: 50µA
Max. forward impulse current: 520A
Semiconductor structure: single diode
Load current: 5A
Max. forward voltage: 2V
Max. load current: 40A
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
товар відсутній
PCDP0665G1_T0_00001 PanJit Semiconductor PCDP0665G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
кількість в упаковці: 1 шт
товар відсутній
PCDP0665G1_T0_00001 PanJit Semiconductor PCDP0665G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
товар відсутній
PCDP08120G1_T0_00001 PanJit Semiconductor PCDP08120G1.pdf PCDP08120G1-T0 THT Schottky diodes
товар відсутній
PCDP0865G1_T0_00001 PanJit Semiconductor PCDP0865G1.pdf PCDP0865G1-T0 THT Schottky diodes
товар відсутній
PCDP10120G1_T0_00001 PanJit Semiconductor PCDP10120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
кількість в упаковці: 1 шт
товар відсутній
PCDP10120G1_T0_00001 PanJit Semiconductor PCDP10120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
товар відсутній
PCDP1065G1_T0_00001 PCDP1065G1_T0_00001 PanJit Semiconductor PCDP1065G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
кількість в упаковці: 1 шт
товар відсутній
PCDP1065G1_T0_00001 PCDP1065G1_T0_00001 PanJit Semiconductor PCDP1065G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
товар відсутній
PCDP1265G1_T0_00001 PanJit Semiconductor PCDP1265G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
кількість в упаковці: 1 шт
товар відсутній
PCDP1265G1_T0_00001 PanJit Semiconductor PCDP1265G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
товар відсутній
PCDP15120G1_T0_00001 PCDP15120G1_T0_00001 PanJit Semiconductor PCDP15120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
кількість в упаковці: 1 шт
товар відсутній
PCDP15120G1_T0_00001 PCDP15120G1_T0_00001 PanJit Semiconductor PCDP15120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
товар відсутній
PCDP1665G1_T0_00001 PanJit Semiconductor PCDP1665G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
PCDP1665G1_T0_00001 PanJit Semiconductor PCDP1665G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
товар відсутній
PCDP20120G1_T0_00001 PCDP20120G1_T0_00001 PanJit Semiconductor PCDP20120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
кількість в упаковці: 1 шт
товар відсутній
PCDP20120G1_T0_00001 PCDP20120G1_T0_00001 PanJit Semiconductor PCDP20120G1.pdf Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
товар відсутній
PCDP2065G1_T0_00001 PanJit Semiconductor PCDP2065G1.pdf PCDP2065G1-T0 THT Schottky diodes
товар відсутній
PDZ5.1B-AU_R1_000A1 PDZ5.1B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
115+3.51 грн
140+ 2.59 грн
250+ 2.29 грн
390+ 2.14 грн
1000+ 2.06 грн
1075+ 2.02 грн
5000+ 1.94 грн
Мінімальне замовлення: 115
PDZ5.1B-AU_R1_000A1 PDZ5.1B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)
70+4.21 грн
85+ 3.23 грн
250+ 2.75 грн
390+ 2.56 грн
1000+ 2.47 грн
1075+ 2.42 грн
5000+ 2.33 грн
Мінімальне замовлення: 70
PE1403M1Q_R1_00001 PanJit Semiconductor PE1403M1Q.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
кількість в упаковці: 5 шт
товар відсутній
PE1403M1Q_R1_00001 PanJit Semiconductor PE1403M1Q.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
товар відсутній
PE1805C4A6_R1_00001 PE1805C4A6_R1_00001 PanJit Semiconductor PE1805C4A6.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape
Mounting: SMD
Case: SOT23-6
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
кількість в упаковці: 5 шт
товар відсутній
PE1805C4A6_R1_00001 PE1805C4A6_R1_00001 PanJit Semiconductor PE1805C4A6.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape
Mounting: SMD
Case: SOT23-6
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
товар відсутній
PE1805C4C6_R1_00001 PE1805C4C6_R1_00001 PanJit Semiconductor PE1805C4C6.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Mounting: SMD
Case: SOT363
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
кількість в упаковці: 5 шт
на замовлення 2975 шт:
термін постачання 7-14 дні (днів)
45+6.5 грн
50+ 5.43 грн
235+ 4.37 грн
640+ 4.12 грн
3000+ 3.97 грн
Мінімальне замовлення: 45
PE1805C4C6_R1_00001 PE1805C4C6_R1_00001 PanJit Semiconductor PE1805C4C6.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Mounting: SMD
Case: SOT363
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)
75+5.42 грн
85+ 4.36 грн
235+ 3.64 грн
640+ 3.44 грн
Мінімальне замовлення: 75
PE4105C1ES_R1_00001 PanJit Semiconductor Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
кількість в упаковці: 25 шт
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)
125+2.7 грн
150+ 1.97 грн
500+ 1.67 грн
675+ 1.47 грн
1875+ 1.39 грн
15000+ 1.35 грн
Мінімальне замовлення: 125
PE4105C1ES_R1_00001 PanJit Semiconductor Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
175+2.25 грн
250+ 1.58 грн
500+ 1.39 грн
675+ 1.22 грн
1875+ 1.16 грн
Мінімальне замовлення: 175
PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
кількість в упаковці: 1 шт
товар відсутній
PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
товар відсутній
PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
кількість в упаковці: 1 шт
товар відсутній
PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
товар відсутній
PEC3202M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6...4V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
кількість в упаковці: 1 шт
товар відсутній
PEC3202M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6...4V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
товар відсутній
PEC3205M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
кількість в упаковці: 1 шт
товар відсутній
PEC3205M1Q_R1_00201 PanJit Semiconductor Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
товар відсутній
PEC3324C2A-AU_R1_000A1 PanJit Semiconductor PEC3324C2A-AU Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
35+11.23 грн
45+ 8.34 грн
100+ 7.4 грн
130+ 6.47 грн
355+ 6.11 грн
Мінімальне замовлення: 35
PEC3324C2A-AU_R1_000A1 PanJit Semiconductor PEC3324C2A-AU Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
25+13.47 грн
30+ 10.39 грн
100+ 8.89 грн
130+ 7.76 грн
355+ 7.33 грн
9000+ 7.16 грн
Мінімальне замовлення: 25
PEC33712C2A_R1_00001 PEC33712C2A_R1_00001 PanJit Semiconductor PEC33712C2A.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 35pF
Max. off-state voltage: 7...12V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 8A
Breakdown voltage: 7.5...13.3V
кількість в упаковці: 5 шт
на замовлення 2040 шт:
термін постачання 7-14 дні (днів)
25+13.01 грн
35+ 8.24 грн
100+ 7.16 грн
170+ 5.87 грн
470+ 5.52 грн
9000+ 5.35 грн
Мінімальне замовлення: 25
PEC33712C2A_R1_00001 PEC33712C2A_R1_00001 PanJit Semiconductor PEC33712C2A.pdf Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 35pF
Max. off-state voltage: 7...12V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 8A
Breakdown voltage: 7.5...13.3V
на замовлення 2040 шт:
термін постачання 21-30 дні (днів)
40+10.84 грн
55+ 6.61 грн
100+ 5.97 грн
170+ 4.89 грн
470+ 4.6 грн
Мінімальне замовлення: 40
PG4007-AU_R2_100A1 PanJit Semiconductor Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Case: DO41
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 50µA
товар відсутній
PG4007-AU_R2_100A1 PanJit Semiconductor Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Case: DO41
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 50µA
кількість в упаковці: 1 шт
товар відсутній
PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
на замовлення 2840 шт:
термін постачання 21-30 дні (днів)
145+2.71 грн
175+ 2.07 грн
490+ 1.7 грн
1345+ 1.61 грн
Мінімальне замовлення: 145
PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
кількість в упаковці: 5 шт
на замовлення 2840 шт:
термін постачання 7-14 дні (днів)
90+3.25 грн
105+ 2.58 грн
490+ 2.04 грн
1345+ 1.93 грн
9000+ 1.86 грн
Мінімальне замовлення: 90
PJA138K-AU_R2_000A1 PanJit Semiconductor PJA138K-AU-R2 SMD N channel transistors
товар відсутній
PJA138K_R1_00001 PanJit Semiconductor PJA138K.pdf PJA138K-R1 SMD N channel transistors
товар відсутній
PJA3400_R1_00001 PJA3400_R1_00001 PanJit Semiconductor PJA3400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 2940 шт:
термін постачання 7-14 дні (днів)
25+12.82 грн
35+ 7.7 грн
100+ 6.64 грн
185+ 5.61 грн
500+ 5.26 грн
9000+ 5.09 грн
Мінімальне замовлення: 25
PJA3400_R1_00001 PJA3400_R1_00001 PanJit Semiconductor PJA3400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2940 шт:
термін постачання 21-30 дні (днів)
40+10.68 грн
60+ 6.18 грн
100+ 5.54 грн
185+ 4.67 грн
500+ 4.39 грн
Мінімальне замовлення: 40
PJA3401A_R1_00001 PJA3401A_R1_00001 PanJit Semiconductor PJA3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 2865 шт:
термін постачання 7-14 дні (днів)
25+12.82 грн
40+ 6.88 грн
100+ 5.96 грн
205+ 4.95 грн
500+ 4.94 грн
565+ 4.68 грн
9000+ 4.49 грн
Мінімальне замовлення: 25
PJA3401A_R1_00001 PJA3401A_R1_00001 PanJit Semiconductor PJA3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2865 шт:
термін постачання 21-30 дні (днів)
40+10.68 грн
70+ 5.52 грн
100+ 4.97 грн
205+ 4.13 грн
500+ 4.12 грн
565+ 3.9 грн
Мінімальне замовлення: 40
PJA3402_R1_00001 PJA3402_R1_00001 PanJit Semiconductor PJA3402.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
45+6.92 грн
50+ 5.6 грн
250+ 4.86 грн
265+ 3.78 грн
725+ 3.57 грн
Мінімальне замовлення: 45
PJA3402_R1_00001 PJA3402_R1_00001 PanJit Semiconductor PJA3402.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
70+5.77 грн
80+ 4.49 грн
250+ 4.05 грн
265+ 3.15 грн
725+ 2.98 грн
Мінімальне замовлення: 70
PJA3403_R1_00001 PanJit Semiconductor PJA3403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
PJA3403_R1_00001 PanJit Semiconductor PJA3403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PJA3404_R1_00501 PJA3404_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 5085 шт:
термін постачання 7-14 дні (днів)
45+6.41 грн
50+ 5.61 грн
225+ 4.5 грн
620+ 4.25 грн
3000+ 4.1 грн
Мінімальне замовлення: 45
PJA3404_R1_00501 PJA3404_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 5085 шт:
термін постачання 21-30 дні (днів)
75+5.34 грн
80+ 4.5 грн
225+ 3.75 грн
620+ 3.54 грн
3000+ 3.41 грн
Мінімальне замовлення: 75
PJA3405-AU_R1_000A1 PanJit Semiconductor PJA3405-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PCDP0465G1_T0_00001 PCDP0465G1.pdf
PCDP0465G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 56W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
кількість в упаковці: 1 шт
товар відсутній
PCDP0465G1_T0_00001 PCDP0465G1.pdf
PCDP0465G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; 56W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Max. load current: 20A
Power dissipation: 56W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 280A
Max. forward voltage: 1.8V
Leakage current: 40µA
товар відсутній
PCDP05120G1_T0_00001 PCDP05120G1.pdf
PCDP05120G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 129.3W
Leakage current: 50µA
Max. forward impulse current: 520A
Semiconductor structure: single diode
Load current: 5A
Max. forward voltage: 2V
Max. load current: 40A
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
кількість в упаковці: 1 шт
товар відсутній
PCDP05120G1_T0_00001 PCDP05120G1.pdf
PCDP05120G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; 129.3W; TO220AC
Technology: SiC
Case: TO220AC
Mounting: THT
Kind of package: tube
Power dissipation: 129.3W
Leakage current: 50µA
Max. forward impulse current: 520A
Semiconductor structure: single diode
Load current: 5A
Max. forward voltage: 2V
Max. load current: 40A
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
товар відсутній
PCDP0665G1_T0_00001 PCDP0665G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
кількість в упаковці: 1 шт
товар відсутній
PCDP0665G1_T0_00001 PCDP0665G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; 57.7W; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Max. load current: 28A
Semiconductor structure: single diode
Max. forward voltage: 1.8V
Case: TO220AC
Kind of package: tube
Leakage current: 50µA
Max. forward impulse current: 320A
Power dissipation: 57.7W
товар відсутній
PCDP08120G1_T0_00001 PCDP08120G1.pdf
Виробник: PanJit Semiconductor
PCDP08120G1-T0 THT Schottky diodes
товар відсутній
PCDP0865G1_T0_00001 PCDP0865G1.pdf
Виробник: PanJit Semiconductor
PCDP0865G1-T0 THT Schottky diodes
товар відсутній
PCDP10120G1_T0_00001 PCDP10120G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
кількість в упаковці: 1 шт
товар відсутній
PCDP10120G1_T0_00001 PCDP10120G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; 151.5W; TO220AC
Mounting: THT
Max. forward voltage: 2V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 640A
Leakage current: 0.1mA
Power dissipation: 151.5W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 76A
товар відсутній
PCDP1065G1_T0_00001 PCDP1065G1.pdf
PCDP1065G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
кількість в упаковці: 1 шт
товар відсутній
PCDP1065G1_T0_00001 PCDP1065G1.pdf
PCDP1065G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; 83.3W; TO220AC
Power dissipation: 83.3W
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 650V
Max. load current: 44A
Max. forward voltage: 1.8V
Load current: 10A
Semiconductor structure: single diode
Max. forward impulse current: 0.55kA
Leakage current: 70µA
товар відсутній
PCDP1265G1_T0_00001 PCDP1265G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
кількість в упаковці: 1 шт
товар відсутній
PCDP1265G1_T0_00001 PCDP1265G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; 102.7W; TO220AC
Power dissipation: 102.7W
Technology: SiC
Max. off-state voltage: 650V
Load current: 12A
Max. load current: 52A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 80µA
Case: TO220AC
Type of diode: Schottky rectifying
Mounting: THT
Max. forward impulse current: 640A
Max. forward voltage: 1.8V
товар відсутній
PCDP15120G1_T0_00001 PCDP15120G1.pdf
PCDP15120G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
кількість в упаковці: 1 шт
товар відсутній
PCDP15120G1_T0_00001 PCDP15120G1.pdf
PCDP15120G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15A; 223.9W; TO220AC
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Case: TO220AC
Max. off-state voltage: 1.2kV
Max. load current: 120A
Max. forward voltage: 2V
Load current: 15A
Semiconductor structure: single diode
Max. forward impulse current: 880A
Leakage current: 140µA
Power dissipation: 223.9W
товар відсутній
PCDP1665G1_T0_00001 PCDP1665G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
кількість в упаковці: 1 шт
товар відсутній
PCDP1665G1_T0_00001 PCDP1665G1.pdf
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; 136.4W; TO220AC
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 16A
Max. load current: 72A
Power dissipation: 136.4W
Semiconductor structure: single diode
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 720A
Max. forward voltage: 1.8V
Leakage current: 0.1mA
товар відсутній
PCDP20120G1_T0_00001 PCDP20120G1.pdf
PCDP20120G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
кількість в упаковці: 1 шт
товар відсутній
PCDP20120G1_T0_00001 PCDP20120G1.pdf
PCDP20120G1_T0_00001
Виробник: PanJit Semiconductor
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; 267.9W; TO220AC
Technology: SiC
Power dissipation: 267.9W
Case: TO220AC
Mounting: THT
Kind of package: tube
Semiconductor structure: single diode
Max. off-state voltage: 1.2kV
Type of diode: Schottky rectifying
Max. load current: 152A
Max. forward voltage: 2V
Load current: 20A
Max. forward impulse current: 960A
Leakage current: 180µA
товар відсутній
PCDP2065G1_T0_00001 PCDP2065G1.pdf
Виробник: PanJit Semiconductor
PCDP2065G1-T0 THT Schottky diodes
товар відсутній
PDZ5.1B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ5.1B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
115+3.51 грн
140+ 2.59 грн
250+ 2.29 грн
390+ 2.14 грн
1000+ 2.06 грн
1075+ 2.02 грн
5000+ 1.94 грн
Мінімальне замовлення: 115
PDZ5.1B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
PDZ5.1B-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 5.1V; SMD; reel,tape; SOD323; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 5.1V
Kind of package: reel; tape
Case: SOD323
Mounting: SMD
Tolerance: ±2%
Semiconductor structure: single diode
Leakage current: 0.75µA
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
70+4.21 грн
85+ 3.23 грн
250+ 2.75 грн
390+ 2.56 грн
1000+ 2.47 грн
1075+ 2.42 грн
5000+ 2.33 грн
Мінімальне замовлення: 70
PE1403M1Q_R1_00001 PE1403M1Q.pdf
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
кількість в упаковці: 5 шт
товар відсутній
PE1403M1Q_R1_00001 PE1403M1Q.pdf
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 4V; 16A; unidirectional; DFN1006-2; reel,tape
Mounting: SMD
Case: DFN1006-2
Capacitance: 0.4pF
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Max. forward impulse current: 16A
Breakdown voltage: 4V
Leakage current: 50nA
Semiconductor structure: unidirectional
Max. off-state voltage: 3.3V
товар відсутній
PE1805C4A6_R1_00001 PE1805C4A6.pdf
PE1805C4A6_R1_00001
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape
Mounting: SMD
Case: SOT23-6
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
кількість в упаковці: 5 шт
товар відсутній
PE1805C4A6_R1_00001 PE1805C4A6.pdf
PE1805C4A6_R1_00001
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT23-6; reel,tape
Mounting: SMD
Case: SOT23-6
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
товар відсутній
PE1805C4C6_R1_00001 PE1805C4C6.pdf
PE1805C4C6_R1_00001
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Mounting: SMD
Case: SOT363
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
кількість в упаковці: 5 шт
на замовлення 2975 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
45+6.5 грн
50+ 5.43 грн
235+ 4.37 грн
640+ 4.12 грн
3000+ 3.97 грн
Мінімальне замовлення: 45
PE1805C4C6_R1_00001 PE1805C4C6.pdf
PE1805C4C6_R1_00001
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; SOT363; reel,tape
Mounting: SMD
Case: SOT363
Breakdown voltage: 6...9V
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Capacitance: 0.8pF
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Semiconductor structure: unidirectional
Max. forward impulse current: 5A
на замовлення 2975 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.42 грн
85+ 4.36 грн
235+ 3.64 грн
640+ 3.44 грн
Мінімальне замовлення: 75
PE4105C1ES_R1_00001
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
кількість в упаковці: 25 шт
на замовлення 5000 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
125+2.7 грн
150+ 1.97 грн
500+ 1.67 грн
675+ 1.47 грн
1875+ 1.39 грн
15000+ 1.35 грн
Мінімальне замовлення: 125
PE4105C1ES_R1_00001
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; SOD523; reel,tape
Type of diode: TVS array
Mounting: SMD
Kind of package: reel; tape
Case: SOD523
Semiconductor structure: unidirectional
Leakage current: 1µA
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5V
Capacitance: 120pF
Breakdown voltage: 6...7.5V
Max. forward impulse current: 13A
на замовлення 5000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
175+2.25 грн
250+ 1.58 грн
500+ 1.39 грн
675+ 1.22 грн
1875+ 1.16 грн
Мінімальне замовлення: 175
PEC11SD03M1Q_R1_00501
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
кількість в упаковці: 1 шт
товар відсутній
PEC11SD03M1Q_R1_00501
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 0.19pF
товар відсутній
PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
кількість в упаковці: 1 шт
товар відсутній
PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Capacitance: 0.6pF
Mounting: SMD
Case: DFN1006-2
Kind of package: reel; tape
Type of diode: TVS
Features of semiconductor devices: ESD protection
Max. off-state voltage: 5.5V
Semiconductor structure: bidirectional
Breakdown voltage: 6.8...11.2V
Leakage current: 75nA
товар відсутній
PEC3202M1Q_R1_00201
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6...4V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
кількість в упаковці: 1 шт
товар відсутній
PEC3202M1Q_R1_00201
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 2.6÷4V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 2.5V
Breakdown voltage: 2.6...4V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
товар відсутній
PEC3205M1Q_R1_00201
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
кількість в упаковці: 1 шт
товар відсутній
PEC3205M1Q_R1_00201
Виробник: PanJit Semiconductor
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 0.5µA
Kind of package: reel; tape
Features of semiconductor devices: ESD protection
Capacitance: 20pF
товар відсутній
PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
35+11.23 грн
45+ 8.34 грн
100+ 7.4 грн
130+ 6.47 грн
355+ 6.11 грн
Мінімальне замовлення: 35
PEC3324C2A-AU_R1_000A1 PEC3324C2A-AU
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 26.2÷30.3V; 7A; bidirectional,double; SOT23
Type of diode: TVS array
Breakdown voltage: 26.2...30.3V
Max. forward impulse current: 7A
Semiconductor structure: bidirectional; double
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Features of semiconductor devices: ESD protection
Leakage current: 50nA
Kind of package: reel; tape
Capacitance: 30pF
Application: automotive industry
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
25+13.47 грн
30+ 10.39 грн
100+ 8.89 грн
130+ 7.76 грн
355+ 7.33 грн
9000+ 7.16 грн
Мінімальне замовлення: 25
PEC33712C2A_R1_00001 PEC33712C2A.pdf
PEC33712C2A_R1_00001
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 35pF
Max. off-state voltage: 7...12V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 8A
Breakdown voltage: 7.5...13.3V
кількість в упаковці: 5 шт
на замовлення 2040 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
25+13.01 грн
35+ 8.24 грн
100+ 7.16 грн
170+ 5.87 грн
470+ 5.52 грн
9000+ 5.35 грн
Мінімальне замовлення: 25
PEC33712C2A_R1_00001 PEC33712C2A.pdf
PEC33712C2A_R1_00001
Виробник: PanJit Semiconductor
Category: Transil diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; bidirectional,double; SOT23
Mounting: SMD
Case: SOT23
Leakage current: 1µA
Kind of package: reel; tape
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Capacitance: 35pF
Max. off-state voltage: 7...12V
Semiconductor structure: bidirectional; double
Max. forward impulse current: 8A
Breakdown voltage: 7.5...13.3V
на замовлення 2040 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+10.84 грн
55+ 6.61 грн
100+ 5.97 грн
170+ 4.89 грн
470+ 4.6 грн
Мінімальне замовлення: 40
PG4007-AU_R2_100A1
Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Case: DO41
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 50µA
товар відсутній
PG4007-AU_R2_100A1
Виробник: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Mounting: THT
Type of diode: rectifying
Features of semiconductor devices: glass passivated
Case: DO41
Max. off-state voltage: 1kV
Max. forward voltage: 1.1V
Load current: 1A
Semiconductor structure: single diode
Max. forward impulse current: 30A
Leakage current: 50µA
кількість в упаковці: 1 шт
товар відсутній
PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
на замовлення 2840 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
145+2.71 грн
175+ 2.07 грн
490+ 1.7 грн
1345+ 1.61 грн
Мінімальне замовлення: 145
PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Gate charge: 1nC
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
Kind of channel: enhanced
Drain-source voltage: 50V
Drain current: 0.5A
On-state resistance: 4.5Ω
Type of transistor: N-MOSFET
Power dissipation: 0.5W
Polarisation: unipolar
кількість в упаковці: 5 шт
на замовлення 2840 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
90+3.25 грн
105+ 2.58 грн
490+ 2.04 грн
1345+ 1.93 грн
9000+ 1.86 грн
Мінімальне замовлення: 90
PJA138K-AU_R2_000A1
Виробник: PanJit Semiconductor
PJA138K-AU-R2 SMD N channel transistors
товар відсутній
PJA138K_R1_00001 PJA138K.pdf
Виробник: PanJit Semiconductor
PJA138K-R1 SMD N channel transistors
товар відсутній
PJA3400_R1_00001 PJA3400.pdf
PJA3400_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 2940 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
25+12.82 грн
35+ 7.7 грн
100+ 6.64 грн
185+ 5.61 грн
500+ 5.26 грн
9000+ 5.09 грн
Мінімальне замовлення: 25
PJA3400_R1_00001 PJA3400.pdf
PJA3400_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2940 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+10.68 грн
60+ 6.18 грн
100+ 5.54 грн
185+ 4.67 грн
500+ 4.39 грн
Мінімальне замовлення: 40
PJA3401A_R1_00001 PJA3401A.pdf
PJA3401A_R1_00001
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 2865 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
25+12.82 грн
40+ 6.88 грн
100+ 5.96 грн
205+ 4.95 грн
500+ 4.94 грн
565+ 4.68 грн
9000+ 4.49 грн
Мінімальне замовлення: 25
PJA3401A_R1_00001 PJA3401A.pdf
PJA3401A_R1_00001
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 2865 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
40+10.68 грн
70+ 5.52 грн
100+ 4.97 грн
205+ 4.13 грн
500+ 4.12 грн
565+ 3.9 грн
Мінімальне замовлення: 40
PJA3402_R1_00001 PJA3402.pdf
PJA3402_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
кількість в упаковці: 5 шт
на замовлення 3000 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
45+6.92 грн
50+ 5.6 грн
250+ 4.86 грн
265+ 3.78 грн
725+ 3.57 грн
Мінімальне замовлення: 45
PJA3402_R1_00001 PJA3402.pdf
PJA3402_R1_00001
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: 17.6A
Drain-source voltage: 30V
Drain current: 4.4A
On-state resistance: 92mΩ
Type of transistor: N-MOSFET
Power dissipation: 1.25W
Polarisation: unipolar
Gate charge: 11.3nC
Kind of channel: enhanced
Gate-source voltage: ±12V
на замовлення 3000 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
70+5.77 грн
80+ 4.49 грн
250+ 4.05 грн
265+ 3.15 грн
725+ 2.98 грн
Мінімальне замовлення: 70
PJA3403_R1_00001 PJA3403.pdf
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
товар відсутній
PJA3403_R1_00001 PJA3403.pdf
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
PJA3404_R1_00501
PJA3404_R1_00501
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
кількість в упаковці: 5 шт
на замовлення 5085 шт:
термін постачання 7-14 дні (днів)
Кількість Ціна без ПДВ
45+6.41 грн
50+ 5.61 грн
225+ 4.5 грн
620+ 4.25 грн
3000+ 4.1 грн
Мінімальне замовлення: 45
PJA3404_R1_00501
PJA3404_R1_00501
Виробник: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhanced
на замовлення 5085 шт:
термін постачання 21-30 дні (днів)
Кількість Ціна без ПДВ
75+5.34 грн
80+ 4.5 грн
225+ 3.75 грн
620+ 3.54 грн
3000+ 3.41 грн
Мінімальне замовлення: 75
PJA3405-AU_R1_000A1 PJA3405-AU.pdf
Виробник: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
товар відсутній
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