Технічний опис 2ED2304S06FXLLA1 Infineon Technologies
Description: LEVEL SHIFT SOI, Packaging: Tube, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -40°C ~ 125°C (TA), Voltage - Supply: 10V ~ 17.5V, Input Type: CMOS, High Side Voltage - Max (Bootstrap): 650 V, Supplier Device Package: PG-DSO-8-910, Rise / Fall Time (Typ): 48ns, 24ns, Channel Type: Synchronous, Driven Configuration: Half-Bridge, Number of Drivers: 2, Gate Type: IGBT, N-Channel MOSFET, Logic Voltage - VIL, VIH: 1.1V, 1.7V, Current - Peak Output (Source, Sink): 360mA, 700mA, Part Status: Obsolete, DigiKey Programmable: Not Verified.
Інші пропозиції 2ED2304S06FXLLA1
| Фото | Назва | Виробник | Інформація |
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| 2ED2304S06FXLLA1 | Виробник : Infineon Technologies |
 LEVEL SHIFT SOI |
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2ED2304S06FXLLA1 | Виробник : Infineon Technologies |
Description: LEVEL SHIFT SOI Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 10V ~ 17.5V Input Type: CMOS High Side Voltage - Max (Bootstrap): 650 V Supplier Device Package: PG-DSO-8-910 Rise / Fall Time (Typ): 48ns, 24ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 1.1V, 1.7V Current - Peak Output (Source, Sink): 360mA, 700mA Part Status: Obsolete DigiKey Programmable: Not Verified |
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2ED2304S06FXLLA1 | Виробник : Infineon Technologies |
Gate Drivers 650V half-bridge 0.7A,integrated BSD |
товар відсутній |