Технічний опис 30KPA160CA-B Littelfuse Inc.
Category: Bidirectional THT transil diodes, Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; 30kW; bulk, Type of diode: TVS, Peak pulse power dissipation: 30kW, Max. off-state voltage: 160V, Breakdown voltage: 187.6V, Max. forward impulse current: 120A, Semiconductor structure: bidirectional, Tolerance: ±5%, Case: P600, Mounting: THT, Leakage current: 2µA, Kind of package: bulk, Features of semiconductor devices: glass passivated, кількість в упаковці: 1 шт.
Інші пропозиції 30KPA160CA-B
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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30KPA160CA-B | Виробник : LITTELFUSE |
 Category: Bidirectional THT transil diodesDescription: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 160V Breakdown voltage: 187.6V Max. forward impulse current: 120A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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30KPA160CA-B | Виробник : Littelfuse |
ESD Suppressors / TVS Diodes TVS Hi-Power Diode Axial |
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30KPA160CA-B | Виробник : LITTELFUSE |
Category: Bidirectional THT transil diodes Description: Diode: TVS; 187.6V; 120A; bidirectional; ±5%; P600; 30kW; bulk Type of diode: TVS Peak pulse power dissipation: 30kW Max. off-state voltage: 160V Breakdown voltage: 187.6V Max. forward impulse current: 120A Semiconductor structure: bidirectional Tolerance: ±5% Case: P600 Mounting: THT Leakage current: 2µA Kind of package: bulk Features of semiconductor devices: glass passivated |
товар відсутній |