8.0SMDJ100A LITTELFUSE
Виробник: LITTELFUSECategory: Unidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 111÷123V; 49.4A; unidirectional; ±5%; DO214AB
Tolerance: ±5%
Type of diode: TVS
Mounting: SMD
Breakdown voltage: 111...123V
Max. forward impulse current: 49.4A
Peak pulse power dissipation: 8kW
Features of semiconductor devices: glass passivated
Max. off-state voltage: 100V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: DO214AB
кількість в упаковці: 3000 шт
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Технічний опис 8.0SMDJ100A LITTELFUSE
Category: Unidirectional SMD transil diodes, Description: Diode: TVS; 8kW; 111÷123V; 49.4A; unidirectional; ±5%; DO214AB, Tolerance: ±5%, Type of diode: TVS, Mounting: SMD, Breakdown voltage: 111...123V, Max. forward impulse current: 49.4A, Peak pulse power dissipation: 8kW, Features of semiconductor devices: glass passivated, Max. off-state voltage: 100V, Kind of package: reel; tape, Semiconductor structure: unidirectional, Leakage current: 5µA, Case: DO214AB, кількість в упаковці: 3000 шт.
Інші пропозиції 8.0SMDJ100A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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8.0SMDJ100A | Виробник : LITTELFUSE |
Category: Unidirectional SMD transil diodes Description: Diode: TVS; 8kW; 111÷123V; 49.4A; unidirectional; ±5%; DO214AB Tolerance: ±5% Type of diode: TVS Mounting: SMD Breakdown voltage: 111...123V Max. forward impulse current: 49.4A Peak pulse power dissipation: 8kW Features of semiconductor devices: glass passivated Max. off-state voltage: 100V Kind of package: reel; tape Semiconductor structure: unidirectional Leakage current: 5µA Case: DO214AB |
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