8.0SMDJ17CA-T7 LITTELFUSE
Виробник: LITTELFUSE
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 18.9÷20.9V; 290A; bidirectional; ±5%; DO214AB
Mounting: SMD
Case: DO214AB
Kind of package: reel; tape
Max. forward impulse current: 290A
Breakdown voltage: 18.9...20.9V
Leakage current: 40µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 8kW
Tolerance: ±5%
Max. off-state voltage: 17V
Semiconductor structure: bidirectional
кількість в упаковці: 1 шт
Category: Bidirectional SMD transil diodes
Description: Diode: TVS; 8kW; 18.9÷20.9V; 290A; bidirectional; ±5%; DO214AB
Mounting: SMD
Case: DO214AB
Kind of package: reel; tape
Max. forward impulse current: 290A
Breakdown voltage: 18.9...20.9V
Leakage current: 40µA
Type of diode: TVS
Features of semiconductor devices: glass passivated
Peak pulse power dissipation: 8kW
Tolerance: ±5%
Max. off-state voltage: 17V
Semiconductor structure: bidirectional
кількість в упаковці: 1 шт
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Технічний опис 8.0SMDJ17CA-T7 LITTELFUSE
Category: Bidirectional SMD transil diodes, Description: Diode: TVS; 8kW; 18.9÷20.9V; 290A; bidirectional; ±5%; DO214AB, Mounting: SMD, Case: DO214AB, Kind of package: reel; tape, Max. forward impulse current: 290A, Breakdown voltage: 18.9...20.9V, Leakage current: 40µA, Type of diode: TVS, Features of semiconductor devices: glass passivated, Peak pulse power dissipation: 8kW, Tolerance: ±5%, Max. off-state voltage: 17V, Semiconductor structure: bidirectional, кількість в упаковці: 1 шт.
Інші пропозиції 8.0SMDJ17CA-T7
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
---|---|---|---|---|---|
8.0SMDJ17CA-T7 | Виробник : LITTELFUSE |
Category: Bidirectional SMD transil diodes Description: Diode: TVS; 8kW; 18.9÷20.9V; 290A; bidirectional; ±5%; DO214AB Mounting: SMD Case: DO214AB Kind of package: reel; tape Max. forward impulse current: 290A Breakdown voltage: 18.9...20.9V Leakage current: 40µA Type of diode: TVS Features of semiconductor devices: glass passivated Peak pulse power dissipation: 8kW Tolerance: ±5% Max. off-state voltage: 17V Semiconductor structure: bidirectional |
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