BSS670S2L

Description: MOSFET N-CH 55V 540MA SOT23-3, Rds On (Max) @ Id, Vgs: 650mOhm @ 270mA, 10V, Current - Continuous Drain (Id) @ 25°C: 540mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 75 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 2.26 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Obsolete, Supplier Device Package: PG-SOT23, Vgs(th) (Max) @ Id: 2V @ 2.7µA, Power Dissipation (Max): 360mW (Ta).