| Кількість | Ціна |
|---|---|
| 1+ | 717.91 грн |
| 10+ | 573.40 грн |
| 75+ | 338.97 грн |
| 525+ | 308.73 грн |
| 1050+ | 210.98 грн |
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Технічний опис C4D08120E Wolfspeed
Description: DIODE SILICON 1.2KV 24.5A TO252, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 560pF @ 0V, 1MHz, Current - Average Rectified (Io): 24.5A, Supplier Device Package: TO-252-2, Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 1200 V, Voltage - Forward (Vf) (Max) @ If: 3 V @ 2 A, Current - Reverse Leakage @ Vr: 250 µA @ 1200 V.
Інші пропозиції C4D08120E за ціною від 390.50 грн до 816.48 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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C4D08120E | Wolfspeed, Inc. |
 Description: DIODE SILICON 1.2KV 24.5A TO252Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 560pF @ 0V, 1MHz Current - Average Rectified (Io): 24.5A Supplier Device Package: TO-252-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3 V @ 2 A Current - Reverse Leakage @ Vr: 250 µA @ 1200 V |
на замовлення 450 шт: термін постачання 21-31 дні (днів) |
|
| C4D08120E |
|
Виробник: Wolfspeed, Inc.
Description: DIODE SILICON 1.2KV 24.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
Description: DIODE SILICON 1.2KV 24.5A TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 560pF @ 0V, 1MHz
Current - Average Rectified (Io): 24.5A
Supplier Device Package: TO-252-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3 V @ 2 A
Current - Reverse Leakage @ Vr: 250 µA @ 1200 V
на замовлення 450 шт:
термін постачання 21-31 дні (днів)| Кількість | Ціна |
|---|---|
| 1+ | 816.48 грн |
| 75+ | 420.52 грн |
| 150+ | 390.50 грн |