A1P50S65M2-F

A1P50S65M2-F STMicroelectronics


a1p50s65m2-f.pdf Виробник: STMicroelectronics
Description: IGBT MOD 650V 50A 208W ACEPACK1
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: ACEPACK™ 1
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Power - Max: 208 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V
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Технічний опис A1P50S65M2-F STMicroelectronics

Description: IGBT MOD 650V 50A 208W ACEPACK1, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Phase Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, NTC Thermistor: Yes, Supplier Device Package: ACEPACK™ 1, IGBT Type: Trench Field Stop, Part Status: Active, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Power - Max: 208 W, Current - Collector Cutoff (Max): 100 µA, Input Capacitance (Cies) @ Vce: 4.15 nF @ 25 V.

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A1P50S65M2-F A1P50S65M2-F Виробник : STMicroelectronics dm00441936-1799107.pdf IGBT Modules ACEPACK 1 sixpack topology, 650 V, 50 A trench gate field-stop IGBT M series, so
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